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SUPSiC GC4D15120H
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- SUPSi C GC4D15120H
- Type
- SUPSIC
- Minimum package
- 30 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- SUPSIC
- Electronic Component
- GC4D15120H
- Electronic Component
- 1
- Package
- TO-247-2
- Electronic Component
- Diode
- Electronic Component
- 8.207g
- Electronic Component
- 1
- Electronic Component
- BM0258761868
- Current
- 39A
- Diode
- 1
- Current(Ir)
- 200uA@1200V
- (Vf)
- 1.5V
- Electronic Component
- 55℃~+175℃
- Electronic Component
- Electronic Component
- Electronic Component
- 30
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
GC4D15120H 产品概述
一、产品简介
GC4D15120H 为 SUPSiC（国晶微半导体）出品的碳化硅（SiC）肖特基整流二极管，额定直流反向耐压 1200V，整流电流 39A，典型正向压降 Vf≈1.5V，反向漏电流 Ir≤200µA（@1200V），工作结温范围宽至 -55°C ~ +175°C，常见封装为 TO-247-2，便于与散热片直接结合使用。该器件专为高压、高温、高效率的整流与开关应用设计。
二、主要特性
- 高耐压：直流反向耐压 1200V，适用于中高压电源与逆变场合。
- 大电流能力：整流电流 39A，可承受中大功率整流负载。
- 低正向压降：Vf≈1.5V，降低导通损耗，提高系统效率。
- 低反向漏流：Ir=200µA@1200V，减少高压下的静态损耗。
- 宽温度工作范围：Tj -55～+175°C，适合高温环境与高热应力工况。
- SiC 器件天然的快速开关与近乎零反向恢复特性，适合高频开关拓扑。
三、优势与典型应用
GC4D15120H 相比传统硅整流器具有导通损耗低、耐高温、开关损耗小、体积/散热优势明显等特点。典型应用场景包括：
- 逆变器与整流模块（太阳能、风电）；
- 高压开关电源（SMPS）、有源前端（PFC）；
- 电动汽车充电桩、高压电池管理与动力系统；
- 不间断电源（UPS）、工业电源、焊接电源与高频整流场合。
四、热管理与装配建议
TO-247-2 封装便于安装至散热片，建议：
- 使用导热界面材料（导热硅脂或绝缘垫）确保良好热接触；
- 按照厂家推荐的螺纹扭矩范围均匀固定，以免应力集中（详见产品资料）；
- 进行适当的功率损耗评估并留有热裕度，避免持续高结温运行；
- 系统级上考虑浪涌电流、瞬态过压保护（TVS、RC箝位或缓冲网络）。
五、可靠性与注意事项
器件在高结温下仍能保持性能稳定，但长期可靠性依赖于正确的热设计与电应力控制。封装在散热、焊接与机械应力方面需遵循供应商的封装与装配指南。此外，SiC 器件对瞬态过压与应力较敏感，选型时建议给出合适的安全余量并配合保护电路。
六、选型建议与采购
在选型时请核对完整数据表（如峰值浪涌电流、热阻 RθJC、引脚排列与尺寸、最大结温与封装限制等）。如需样片、批量采购或获取详细应用曲线与参考电路，请联系 SUPSiC 或授权分销商获取最新版技术资料与支持。
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