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SUPSiC GC4D10120D
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- SUPSi C GC4D10120D
- Type
- SUPSIC
- Minimum package
- 30 管
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- SUPSIC
- Electronic Component
- GC4D10120D
- Electronic Component
- 1
- Package
- TO-247-3
- Electronic Component
- Diode
- Electronic Component
- 8.55g
- Electronic Component
- 1
- Electronic Component
- BM0257658494
- Current
- 38A
- Diode
- 1
- Current(Ir)
- 150uA@1200V
- (Vf)
- 1.5V
- Electronic Component
- 55℃~+175℃
- Electronic Component
- Electronic Component
- Electronic Component
- 30
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
GC4D10120D 产品概述
一、产品概述
GC4D10120D 是 SUPSiC（国晶微半导体）推出的一款高压碳化硅（SiC）肖特基整流二极管，采用 TO-247-3 封装，面向大功率、高效率电力电子应用。该器件在高耐压与低正向压降之间实现良好平衡，可在高结温下稳定工作，适用于恶劣工作环境与高开关频率场景。
二、主要电气参数
- 整流电流（IF）：38 A（额定）
- 正向压降（Vf）：典型 1.5 V（在额定电流附近）
- 直流反向耐压（Vr）：1200 V
- 反向漏电流（Ir）：150 μA @ 1200 V
- 非重复峰值浪涌电流（Ifsm）：46 A（规格值）
- 工作结温范围：-55 ℃ ~ +175 ℃
三、核心优势
- 碳化硅材料带来更低的导通损耗与更高的击穿场强，适合 1.2 kV 级别高压整流。
- 低正向压降有助于降低导通损耗、提升系统效率、减少散热需求。
- 宽温度范围与高温稳定性，适合高温工作环境与紧凑散热设计。
- SiC 肖特基本身无明显反向恢复，适合高频开关场合，降低开关损耗与电磁干扰（EMI）。
四、典型应用场景
- 高压整流桥与前端整流（工业电源、服务器电源）
- 功率因数校正（PFC）级
- 太阳能逆变器与储能系统的高压侧整流
- 电机驱动与电动汽车车载充电器（OBC）
- 高频开关电源与长寿命功率模块
五、封装与热管理建议
TO-247-3 封装便于安装在散热器上，建议按下列要点设计散热：
- 按额定电流进行热阻与结温分析，必要时配合绝缘垫片或导热硅脂；
- 在高环境温度或连续满载时应考虑电流降额；
- PCB 与散热器间导热路径要尽量短、接触良好。
六、可靠性与使用注意事项
- 反向漏电随温度上升显著增加，设计时需留有裕量；
- Ifsm 为非重复浪涌值，不可作为连续过载参考；
- 注意静电与浪涌保护，安装操作遵循常规功率器件防护规范；
- 在高电压开关场合建议配合适当的缓冲或吸收电路以抑制过电压应力。
七、结论与选型建议
GC4D10120D 适合需要 1.2 kV 阻断、几十安整流且追求高效率与高温工作的电力电子系统。选型时应综合考虑实际工作电流、散热能力与浪涌要求，如需更高浪涌或更低正向压降，可与供应商沟通具体应用条件以获得最佳匹配。
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