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SUPSiC GC2M0080120K
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- SUPSi C GC2M0080120K
- Type
- SUPSIC
- Minimum package
- 30 管
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- SUPSIC
- Electronic Component
- GC2M0080120K
- Electronic Component
- 1
- Package
- TO-247-3
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 8.667g
- Electronic Component
- 1
- Electronic Component
- BM0257658502
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 192W
- Electronic Component
- Electronic Component
- Electronic Component
- 30
- Voltage(Vdss)
- 1.2kV
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
GC2M0080120K 产品概述
一、产品简介
GC2M0080120K 为 SUPSiC（国晶微）推出的一款单通道 1.2kV N 沟道碳化硅（SiC）功率 MOSFET，采用 TO-247-3 封装，面向高电压、高效率电力电子系统。器件兼顾高耐压与较低导通损耗，适用于中高功率开关和逆变场合。
二、主要参数
- 类型：N 沟道 SiC MOSFET（单通道）
- 漏源耐压 Vdss：1.2 kV
- 连续漏极电流 Id：36 A
- 最大耗散功率 Pd：192 W（散热条件相关）
- 导通电阻 RDS(on)：98 mΩ
- 阈值电压 Vgs(th)：4 V
- 总栅极电荷 Qg：71 nC
- 输入电容 Ciss：1.13 nF
- 反向传输电容 Crss：7.5 pF
- 输出电容 Coss：92 pF
- 工作温度范围：-55 ℃ ～ +150 ℃
- 封装：TO-247-3
三、特点与优势
- 高耐压能力（1.2 kV）：适合中压及高压电源、牵引与逆变器应用。
- 低导通电阻：98 mΩ 在同类 1.2 kV 器件中体现较低导通损耗，利于提高系统效率。
- 快速开关特性：较小的 Coss 与 Crss 有利于降低开关能量损耗与死区时间要求。
- 宽温度工作范围：-55～150 ℃，适合苛刻环境与高温工作场景。
四、典型应用场景
- 光伏逆变器、风电变流器、高压直流-直流（HV DC-DC）转换器；
- 工业电源、高频开关电源（PFC 级）；
- 电动车充电桩、牵引驱动与中高压电机驱动；
- 需要高耐压与快速切换的功率级。
五、设计与驱动建议
- 栅极驱动：Qg=71 nC，栅极驱动器需提供足够电流以满足开关速度要求；建议采用 12–18 V 的正向驱动电压以获得稳定的开通特性，具体驱动幅值与器件极限请参照数据手册。
- 开关过渡控制：适当选用串联栅阻、RC 缓冲或软开关技术以抑制过高 dv/dt 和振荡。Crss 较小有利于降低米勒电容影响，但在高速切换时仍需注意布局与阻尼。
- 并联与热管理：36 A 连续电流在实际应用中受散热条件限制，TO-247-3 需配合良好散热片或强迫风冷；并联时应做好电流均流与门极匹配设计。
六、封装与热性能
TO-247-3 封装便于散热器安装与电流引出，Pd=192 W 是在理想散热条件下的耗散指标，实际使用中应根据结-壳、壳-散热片及环境热阻重新评估结温并保证不超过规定的工作温度上限。
七、可靠性与选型提示
在关键应用中建议参考制造商的完整数据手册与可靠性测试报告，关注最大额定 Vgs、短路耐受能力及热阻参数。对于要求更低导通损耗或更快开关速度的场合，可在系统层面综合考虑驱动功率、滤波与电磁兼容设计。
GC2M0080120K 提供了在 1.2 kV 级别下平衡导通损耗与开关性能的选择，是中高压电力电子系统中值得考虑的 SiC MOSFET 器件。
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