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SUPSiC GC3N150PF
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- SUPSi C GC3N150PF
- Type
- SUPSIC
- Minimum package
- 30 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- SUPSIC
- Electronic Component
- GC3N150PF
- Electronic Component
- 1
- Package
- TO-3PF
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 5.975g
- Electronic Component
- 1
- Electronic Component
- BM0257658496
- Power Dissipation(Pd)
- 35W
- Electronic Component
- Electronic Component
- Electronic Component
- 30
- Voltage(Vdss)
- 1.5kV
- Capacitor(Ciss)
- 184pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
GC3N150PF 产品概述
一、产品简介
GC3N150PF 是 SUPSiC（国晶微半导体）面向中高压开关应用推出的碳化硅（SiC）MOSFET 器件。器件额定漏源电压 Vdss 为 1.5kV，连续漏极电流 Id 为 3.7A，耗散功率 Pd 为 35W，采用 TO-3PF 功率封装，适用于要求高耐压与高速切换的电力电子场合。
二、关键电气参数
- 漏源电压（Vdss）：1.5 kV，支持高压直流链路与升压拓扑。
- 连续漏极电流（Id）：3.7 A，适合中小功率转换器及级联应用。
- 耗散功率（Pd）：35 W，配合 TO-3PF 散热器可保持器件工作温度在安全范围内。
- 栅极电荷（Qg）：14 nC，属于中等栅极能量需求，需相应的栅极驱动能力以获得理想开关速度。
- 输入/输出/反向传输电容：Ciss=184 pF、Coss=16 pF、Crss=6 pF，有利于降低开关能量损耗与米勒效应。
三、特性与优势
- 高耐压、低损耗：1.5 kV 的耐压能力非常适合高压直流侧应用，SiC 器件本征导通与开关损耗低。
- 快速开关：较小的 Coss 与 Crss 有助于实现快速上升/下降沿，减少开关过渡损耗。
- 可控栅驱动需求：Qg=14 nC，栅极驱动器需提供足够电流以实现低开关损耗与受控过渡，建议配合合适的栅阻与驱动电路。
四、典型应用场景
- 高压有源功率因数校正（PFC）与前端开关。
- 光伏逆变器、高压直流-直流转换器（HVDC 小功率端）、UPS 与储能系统。
- 高频高压电源、工业电机驱动与电阻开关场景。
五、热管理与使用建议
- 封装为 TO-3PF，需采用合适散热片或强制风冷；器件 Pd 35W 在实际设计中应按结温与环境温度进行热余量/降额设计。
- 布局上应尽量缩短高电流回路，稳固泄放路径并加装合适的吸收/限流元件（如 TVS、RC 网络）以保护器件。
- 建议在实验中测定驱动电阻与死区时间以优化开关损耗与电磁兼容性。
六、可靠性与注意事项
- 注意绝缘与爬电距离设计以防高压击穿，安装时遵循厂商推荐的扭矩与界面材料。
- 在高 dv/dt 环境下，需验证驱动电路对寄生触发和米勒效应的处理，必要时增加栅极钳位或缓冲电路。
总结：GC3N150PF 在 1.5kV 等级下提供了良好的开关性能与适用性，适合多种高压电力电子方案。实际应用中需关注栅极驱动、热设计与电磁兼容性，以发挥该 SiC MOSFET 的优势。若需器件的典型波形、开关损耗曲线或推荐外围电路图，可进一步提供以便给出更详细的设计建议。
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