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SUPSiC GC3M0120090D
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- SUPSi C GC3M0120090D
- Type
- SUPSIC
- Minimum package
- 30 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- SUPSIC
- Electronic Component
- GC3M0120090D
- Electronic Component
- 1
- Package
- TO-247-3
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 8.59g
- Electronic Component
- 1
- Electronic Component
- BM0258761871
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 97W
- Electronic Component
- Electronic Component
- Electronic Component
- 30
- Voltage(Vdss)
- 900V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
GC3M0120090D 产品概述
一、概述
GC3M0120090D 是 SUPSiC（国晶微半导体）推出的一款高压 N 沟道碳化硅（SiC）功率 MOSFET，面向高效率、高频率的电力电子系统。器件耐压 900V，适用于中高压变换、纳米/兆瓦级逆变器前端以及工业驱动等场景，兼顾低导通损耗与较小开关损失。
二、主要电气参数
- 类型：N 沟道 MOSFET
- 漏源电压 Vdss：900V
- 连续漏极电流 Id：23A
- 导通电阻 RDS(on)：120mΩ @ Vgs=15V
- 耗散功率 Pd：97W
- 门极阈值电压 Vgs(th)：2.1V
- 总栅极电荷 Qg：21nC
- 输入电容 Ciss：414pF
- 输出电容 Coss：48pF
- 反向传输电容 Crss：3pF
- 工作温度范围：-55℃ ~ +150℃
- 封装：TO-247-3
三、核心优势
- 高耐压（900V）满足大多数中高压拓扑需求；
- SiC 材料本征优势带来更快开关速度和更低导通电阻/更小导通损耗；
- 适中栅极电荷（21nC）和较小 Coss，有利于在高频下维持可接受的开关损耗和驱动能耗；
- TO-247-3 封装便于散热管理与模块化设计，适配现有工业散热方案。
四、封装与热管理
TO-247-3 提供良好的散热路径和机械可装配性。器件标称耗散功率 97W，在实际应用中需结合散热体、热界面材料及风冷/液冷方案进行功率与温升计算。建议在高电流或长时间重载工况下采用低热阻散热器并留足 PCB 散热区域。
五、开关与驱动建议
- 推荐栅极驱动电压以 15V 为目标（器件在 15V 时给出 RDS(on)），以保证低导通损耗；
- 由于 Qg=21nC，驱动器需具备足够瞬态驱动能力以控制上升/下降时间，避免过快切换引起过电压或 EMI；
- 建议在门极串联适当门阻以调节开关速度，配合RC或RCD 缓冲吸收电路抑制振铃与过冲；
- 在高压侧可考虑使用 TVS 或缓冲器对抗浪涌和钳位反向峰值。
六、典型应用场景
- 中高压开关电源（PFC、LLC 升压/降压拓扑）；
- 太阳能逆变器、储能电源中级与高压侧功率开关；
- 工业变频驱动、高频电源与电动汽车充电桩前端；
- 其它需要高效率、紧凑散热与高耐压特性的功率转换系统。
七、设计注意事项
- PCB 布局须最小化栅极回路和漏源回路寄生电感，缩短导线长度与回路面积；
- 对于并联使用需考虑 RDS(on) 一致性与热分布，必要时使用电流共享元件或软启动控制；
- 在系统级设计中注意器件结温随工作点的变化并进行热余量设计，避免长期高温工作导致可靠性下降；
- 参考厂商完整数据手册进行 SOA、短路能力和浪涌电流校核。
八、可靠性与工作环境
器件支持 -55℃ 至 +150℃ 工作温度区间，适应宽温度环境。实际使用时应关注结-壳与结-环境的热阻、温度循环和产业级可靠性测试结果，按应用需求选择合适的保守安全裕量与保护策略。
如需整机性能评估或并联、散热方案建议，建议参照 GC3M0120090D 的完整数据手册并与 SUPSiC 技术支持沟通，以获得应用级的参数与测试数据。
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