WMSIC Electronic Components

SUPSiC GC2M0045170D

ModelGC2M0045170D
PackageTO247-3
BrandSUPSIC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
SUPSi C GC2M0045170D
Type
SUPSIC
Minimum package
30 管

Technical parameters

Electronic Component
Electronic Component
Electronic Component
SUPSIC
Electronic Component
GC2M0045170D
Electronic Component
1
Package
TO247-3
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
8.517g
Electronic Component
1
Electronic Component
BM0229953541
Operating Temperature
40℃~+150℃
Power Dissipation(Pd)
520W
Electronic Component
Electronic Component
Electronic Component
30
Voltage(Vdss)
1.7kV

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

GC2M0045170D 产品概述

一、产品简介

GC2M0045170D 是 SUPSiC(国晶微半导体)推出的一款 1 个 N 沟道碳化硅(SiC)功率 MOSFET,封装为 TO-247-3。器件额定漏源电压达 1.7 kV,适用于高压电力电子系统。该器件结合了 SiC 材料的高击穿电压、宽温区工作能力与较低的导通电阻和快速开关特性,面向高功率、高效率和高温环境的电力变换应用。

主要参数速览:

  • 类型:N 沟道
  • Vdss(漏源电压):1.7 kV
  • 连续漏极电流 Id:72 A(注:热设计相关)
  • 耗散功率 Pd:520 W(在规定散热条件下)
  • 导通电阻 RDS(on):45 mΩ @ Vgs = 20 V
  • 阈值电压 Vgs(th):2.6 V
  • 栅极电荷量 Qg:188 nC
  • 输入电容 Ciss:3.672 nF
  • 输出电容 Coss:176 pF
  • 反向传输电容 Crss:6.7 pF
  • 工作温度:-40 ℃ ~ +150 ℃
  • 封装:TO-247-3

二、关键参数与工程意义

  • 高压耐受(1.7 kV):适合中高压变换器(如 600 V 及以上整流后直流链路的倍压结构、HVDC、牵引、风电/光伏逆变器的高压级)。
  • 低 RDS(on)(45 mΩ@20 V):在低到中等电流条件下有利于降低导通损耗,但在高电流(几十安到上百安)时仍需注意 I^2R 损耗及散热设计。
  • 较大 Qg(188 nC)和 Ciss(3.672 nF):意味着栅极驱动能量和驱动能力要求较高,需要足够的驱动电流与合适的栅阻来控制开关速度与振铃。
  • 小 Crss(6.7 pF):有利于减小 Miller 效应,使开关过渡更可控、dv/dt 影响较小。
  • 相对较小的 Coss(176 pF)在低压器件中看似小,但在 1.7 kV 额定下,Coss 导致的能量(Eoss = 0.5·Coss·V^2)在高压切换时会非常显著,应特别关注开关损耗。

示例能量计算(用于估算设计影响):

  • 单次栅极能量 ≈ Qg·Vgs = 188 nC · 20 V = 3.76 µJ → 在 100 kHz 下栅极损耗约 0.376 W。
  • 单次 Coss 能量 Eoss ≈ 0.5·Coss·Vds^2 = 0.5·176 pF·(1700 V)^2 ≈ 254 µJ → 在 100 kHz 下若每次切换都完全充放电,则对应 ~25.4 W(真实系统可通过能量回收或软开关显著降低)。

三、开关与驱动设计要点

  • 驱动电流需求:为在目标开关时间内充放电 Qg,建议使用能提供数安至十几安短时脉冲的栅极驱动器。举例:若期望总上升时间(tr)≈100 ns,则 Ig ≈ Qg / tr ≈ 1.88 A(平均),但峰值需留裕,建议选用能提供 5 A 以上峰值的驱动器并配置合适的栅阻。
  • 栅阻选择:常用 5–20 Ω 的外接栅阻用于抑制振铃并控制 dv/dt;高压快速开关时可采用可调或并联阻尼网络。
  • Miller 钳位与保护:建议设计 Miller clamp 或软关断电路,避免在高 dv/dt 下误触发。栅极过压、负压保护、电阻分压或 TVS 也应考虑。
  • 布局与寄生:尽量缩短驱动回路和功率回路走线,减小回路电感,以控制电压振铃与局部过压。

四、热设计与可靠性

  • 封装 TO-247-3 提供良好散热接口,但要配合适当的散热器、导热垫或水冷方案,以便在高功率应用中维持安全结温。
  • 导通损耗示例:Pcond = I^2·RDS(on)。例如 I = 30 A 时 Pcond ≈ 30^2·0.045 ≈ 40.5 W;I = 50 A 时 ≈ 112.5 W。实际允许电流需根据系统散热能力与结温限制做热阻计算与降额。
  • 工作温度上限 150 ℃ 支持宽温区应用,但 RDS(on) 会随温度上升而显著增加,需在热仿真中纳入温漂和散热裕度。

五、典型应用场景

  • 中高压开关电源(PFC、高压 DC-DC)
  • 光伏逆变器与风电变流器的高压级
  • 电动牵引与铁路牵引逆变器
  • UPS、工业电源、固态断路器(SSB)
  • 高压充电站、直流配电系统

六、设计建议与注意事项

  • 在高频高压系统中优先考虑软开关或能量回收方式以降低 Coss 导致的开关损耗。
  • 使用 Kelvin 取源(独立源返回)以改善驱动稳定性与测量精度。
  • 对散热器、热界面材料、焊接工艺进行验证,确保器件在持续高功率工况下的热循环可靠性。
  • 做完整的开关过渡仿真(包含 PCB 寄生、电感、电容)以评估振铃、过压与 EMI 问题。

七、总结

GC2M0045170D 是一款面向高压场景的 SiC MOSFET,具备 1.7 kV 耐压、较低 RDS(on) 与宽温区能力,适合高效率、高功率密度的电力电子系统。设计时需重点考虑栅极驱动能力、Coss 导致的开关能量、以及严格的热管理与布局控制。合理的驱动与软开关策略可显著发挥其高压快速切换与高温稳定性的优势。

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