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SUPSiC GC4D20120D
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- SUPSi C GC4D20120D
- Type
- SUPSIC
- Minimum package
- 30 管
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- SUPSIC
- Electronic Component
- GC4D20120D
- Electronic Component
- 1
- Package
- TO-247-3
- Electronic Component
- Diode
- Electronic Component
- 8.433g
- Electronic Component
- 1
- Electronic Component
- BM0229953530
- Current
- 34A
- Diode
- 1
- Current(Ir)
- 250uA@1200V
- (Vf)
- 1.5V
- Electronic Component
- 55℃~+175℃
- Electronic Component
- Electronic Component
- Electronic Component
- 30
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
GC4D20120D 产品概述
一、产品概述
GC4D20120D 为 SUPSiC（国晶微半导体）出品的 1200V 等级碳化硅（SiC）肖特基整流二极管，额定整流电流 34A，封装为 TO-247-3。该器件结合了 SiC 材料的高耐压、低正向压降和高温工作能力，适合高效率、高频率及高温环境下的功率整流与自由轮回工作。
二、主要参数与特点
- 额定整流电流（IF）：34 A
- 直流反向耐压（VR）：1200 V
- 正向压降（Vf）：约 1.5 V（典型值，具体见器件曲线）
- 反向电流（IR）：250 μA @ 1200 V
- 非重复峰值浪涌电流（IFSM）：71 A
- 工作结温范围：-55 ℃ 至 +175 ℃
- 封装：TO-247-3，便于安装与散热
- 特性：极低的反向恢复（几乎无反向恢复）和开关损耗，适用于高频开关场合；耐高温、热稳定性好。
三、典型应用场景
- 开关电源（SMPS）中的高压整流与输出二极管
- 功率因数校正（PFC）电路
- 逆变器与光伏（PV）系统的高压整流与保护
- 电机驱动与电动车充电设施的整流/自由轮回
- 高频功率变换器与能量回馈系统
四、封装与散热建议
TO-247-3 封装有良好散热能力，但实际使用中仍建议配合合适散热片或强制风冷以保证结温在安全范围内。布局时应尽量缩短高电流回路的连接长度、增大铜箔面积以降低电阻和寄生电感。对于长时间大电流工作，请按厂方曲线进行温度与电流的热密度换算并适当降额使用。
五、选型与工程注意事项
- 留意反向泄漏随温度上升快速增加，设计时需考虑高温下的漏电流对系统效率与安全的影响；
- 峰值浪涌能力（IFSM）为非重复值，须避免频繁冲击或超限冲击；
- 若用于高频开关场合，可充分利用 SiC 肖特基几乎无反向恢复的优势以降低开关损耗；
- 最终选型应参考器件详细数据手册（IV 曲线、热阻、封装图与焊接规范），并在目标工况下做热仿真与可靠性评估。
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