WMSIC Electronic Components

SUPSiC GC4D30120D

ModelGC4D30120D
PackageTO-247-3
BrandSUPSIC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
SUPSi C GC4D30120D
Type
SUPSIC
Minimum package
30 管

Technical parameters

Electronic Component
Electronic Component
Electronic Component
SUPSIC
Electronic Component
GC4D30120D
Electronic Component
1
Package
TO-247-3
Electronic Component
Diode
Electronic Component
8.487g
Electronic Component
1
Electronic Component
BM0257658498
Current
44A
Diode
1
Current(Ir)
200uA@1200V
(Vf)
1.8V@15A
Electronic Component
55℃~+175℃
Electronic Component
Electronic Component
Electronic Component
30

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

GC4D30120D 产品概述

一、产品简介

GC4D30120D 是 SUPSiC(国晶微半导体)推出的一款硅碳(SiC)肖特基功率整流二极管,封装为 TO-247-3。器件额定直流整流电流为 44A,直流反向耐压(Vr)为 1200V,适合高压、轻量化及高效率电力电子系统的整流和自由轮回应用。

二、主要电气参数

  • 连续整流电流:44 A
  • 正向压降(Vf):1.8 V @ 15 A
  • 直流反向耐压:1200 V
  • 反向漏电流(Ir):200 μA @ 1200 V
  • 非重复峰值浪涌电流(Ifsm):100 A
  • 工作结温范围:-55 ℃ ~ +175 ℃

三、关键特性与优势

  • 高频开关系统中导通损耗低:SiC肖特基结构在中高电流下具有较低的正向压降,相比同电压等级的硅二极管可显著降低导通损耗。
  • 几乎无反向恢复:肖特基特性带来极小的反向恢复电荷,降低开关损耗和电磁干扰(EMI),特别适合高频拓扑。
  • 耐高温能力强:工作结温高达 +175 ℃,在热应力或高温环境中具有更宽裕的设计余量。
  • 抗浪涌能力:100 A 的峰值浪涌电流能力可满足短时启动或故障状态下的冲击需求。

四、典型应用场景

适用于需要高压耐受和高效率整流的场合,例如:

  • 工业与服务器级开关电源中的主整流或 PFC(二次整流)
  • 光伏逆变器、储能系统与电动车充电桩的高压整流链路
  • 电机驱动、变频器和轨道牵引等中高压动力电子设备
  • UPS、备电与中大型电源模块的自由轮回二极管

五、封装与散热建议

TO-247-3 封装便于安装于散热片或模块化母板,实际使用中建议:

  • 采用合适的散热片或强制风冷以控制结温,必要时使用热界面材料(TIM)降低热阻;
  • 在高温或接近最大电流工况下进行电流降额设计,保证长期可靠性;
  • 注意螺丝固定扭矩与引脚焊接工艺,避免应力集中与热循环造成的机械疲劳。

六、可靠性与使用注意

  • 在高电压工作点下,虽反向漏电流仅为数百微安,但长期高温会使漏流和功耗增加,应考虑温度相关的降额;
  • 器件对浪涌有一定承受力,但频繁的大幅度浪涌会影响寿命,应配合抑制电路或合理保护策略;
  • 常规防静电与清洁安装操作,避免颗粒或焊剂残留影响散热和绝缘。

七、总结

GC4D30120D 以 1200V 高耐压、SiC肖特基低正向压降和宽工作温度范围为核心优势,适合需要高效率、低损耗和耐高温的中高压电力电子应用。在设计时结合合理的散热与降额策略,可在高性能整流和高频开关场合显著提升系统效率与可靠性。

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