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SUPSiC GC3M0015065D
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- SUPSi C GC3M0015065D
- Type
- SUPSIC
- Minimum package
- 30 管
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- SUPSIC
- Electronic Component
- GC3M0015065D
- Electronic Component
- 1
- Package
- TO-247-3
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 8.167g
- Electronic Component
- 1
- Electronic Component
- BM0229953545
- Operating Temperature
- 40℃~+175℃
- Power Dissipation(Pd)
- 416W
- Electronic Component
- Electronic Component
- Electronic Component
- 30
- Voltage(Vdss)
- 650V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
GC3M0015065D 产品概述
一 概述
GC3M0015065D 是国晶微半导体（SUPSiC）推出的一款 650V 级碳化硅（SiC）N 沟 MOSFET，采用 TO-247-3 封装。器件以低导通电阻和高温耐受为特点，适用于中高压、高频率电源转换与电机驱动等需要高效率与高可靠性的场合。
二 主要电气参数
- 类型：N 沟 MOSFET
- 漏源电压 Vdss：650V
- 连续漏极电流 Id：120A
- 耗散功率 Pd：416W（在规定散热条件下）
- 导通电阻 RDS(on)：15mΩ @ Vgs=15V
- 阈值电压 Vgs(th)：2.3V
- 栅极电荷 Qg：188nC
- 输入电容 Ciss：5.011nF
- 输出电容 Coss：289pF
- 反向传输电容 Crss：31pF
- 工作结温范围：-40℃ ~ +175℃
- 封装：TO-247-3
三 关键特性与性能解读
该器件的 15mΩ 导通电阻在 650V 级 SiC 器件中属于适中偏低水平，能显著降低导通损耗；高达 120A 的连续电流能力配合 416W 的耗散能力，适合大电流短时或有良好散热的连续工作。Qg 较大（188nC），表明开关时需较强的驱动能力；Coss 与 Crss 给出器件的电容特性，影响开关能量和电压应力。
四 典型应用场景
- 650V 级反激、LLC、软开关等中高频开关电源
- 光伏逆变器与储能系统前端功率开关
- 电机驱动中的中间母线开关或直流断路器件
- UPS、不间断电源与工业电源解决方案
五 设计与使用建议
- 驱动：推荐 0~+15V 强驱动栅极，注意驱动器的瞬时电流能力以满足 188nC 的栅极充放电需求；必要时采用阻尼/限流电阻以抑制振铃。
- 抗干扰：Crss 较小有利于降低 Miller 效应，但在高 dv/dt 场合需防止误触发，可考虑在栅极施加小幅负压（如 -2~ -5V）或使用合理的栅极回路布局。
- 热管理：在大电流工作点应采用低热阻散热器或强制风冷/液冷；尽量缩短走线并优化底板散热路径。
- 保护：建议并用快速熔断、限流检测以及合适的 RC 吸收/负载钳位以防止开关应力与浪涌。
六 封装与可靠性
TO-247-3 提供了良好的散热面与方便的安装方式，适合工程化应用与模块化电源设计。器件工作结温上限 175℃ 赋予系统更高的环境适应能力，但仍需在可靠的散热和热循环管理下使用以延长寿命。
七 小结
GC3M0015065D 将 SiC 的高击穿电压与低导通损耗优势结合在一个中等尺寸封装中，适合对效率和耐热有较高要求的中高压电力电子场景。设计时需重点考虑栅极驱动能力与热管理，以发挥器件的最佳性能。
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