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SILAN SVF7N65F
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- SILAN SVF7N65F
- Type
- SILAN
- Unit
- Electronic Component
- Minimum package
- 1000 管
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- SILAN
- Electronic Component
- SVF7N65F
- Electronic Component
- 1
- Package
- TO-220F-3
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 2.297g
- Electronic Component
- 1
- Electronic Component
- BM0000284582
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 46W
- Electronic Component
- Electronic Component
- Electronic Component
- 1000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SVF7N65F 产品概述
一、基本信息
SVF7N65F 是由士兰微（SILAN）公司生产的一款 N 沟道功率MOSFET，具有优异的电气性能和热稳定性，其主要规格如下：
- 漏源电压（Vdss）: 650V
- 连续漏极电流（Id）: 7A（25°C时）
- 栅源极阈值电压: 4V @ 250μA
- 漏源导通电阻: 1.4Ω @ 3.5A, 10V
- 最大功率耗散（Ta=25°C）: 46W
- 封装类型: TO-220F 塑封
二、产品特点
高电压承受能力: SVF7N65F 具有高达 650V 的漏源电压，可适用于高电压环境，有效保证电路的稳定性。
良好的导通性能: 漏源导通电阻为 1.4Ω，这意味着在正常工作条件下，该器件能够有效降低导通损耗，提高系统的能源效率。
适用于高温环境: 最大功率耗散为 46W，确保在高负载情况下仍能维持良好的工作性能，同时有助于提升系统的可靠性。
灵活的操作范围: 栅源极阈值电压为 4V，使得其能够在相对较低的栅极驱动电压下实现高效开关操作，降低了复杂驱动电路的需求。
封装优势: TO-220F 塑封封装设计，便于散热，并能够较好地适应电路板设计，确保更好的安装和散热性能。
三、应用领域
SVF7N65F 作为一款高性能N沟道功率MOSFET，广泛应用于多个领域，包括但不限于：
电源管理: 适用于开关电源、DC-DC变换器等电源管理设备，提供稳定的电压和高效的能量转换。
电动机驱动: 适合在电机控制和驱动系统中使用，能够应对较高的电流和电压需求，实现高效的电机控制。
照明控制: 在LED驱动电路中，能够以高频率快速开关，优化灯光的控制和亮度调节。
工控及自动化: 在各种工业自动化设备中，提供可靠的开关和控制功能，支持控制系统的高效运行。
汽车电子应用: 可用于汽车电源管理系统，提供高效的电能控制和管理，符合现代汽车对电子设备高效能及耐用性的需求。
四、总结
SVF7N65F 是一款功能强大、应用广泛的N沟道功率MOSFET，凭借其优异的电气特点和可靠的性能，适合于多种高电压和大电流的应用场合。随着技术的发展及对能源效率的愈发重视，该产品将为相关领域提供更多可能。通过合理的应用和设计，SVF7N65F能够在实际电路中发挥其最佳性能，推动电子设备向更加高效、可靠的方向发展。
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