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SILAN SVF4N65DTR
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- SILAN SVF4N65DTR
- Type
- SILAN
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- SILAN
- Electronic Component
- SVF4N65DTR
- Electronic Component
- 1
- Package
- TO-252-2(DPAK)
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.468g
- Electronic Component
- 1
- Electronic Component
- BM0221187867
- Power Dissipation(Pd)
- 77W
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- Voltage(Vdss)
- 650V
- Capacitor(Ciss)
- 533pF
- Gate (Qg)
- 12.8nC@10V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SVF4N65DTR 产品概述
一、基本信息
产品名称：SVF4N65DTR
类型：N沟道MOSFET
功率额定：77W
电压额定：650V
电流额定：4A
封装类型：TO-252-2(DPAK)
制造品牌：SILAN（士兰微）
二、产品特性
SVF4N65DTR是一款高性能的N沟道场效应管，专为各种电子电路应用设计。凭借其650V的高耐压能力和77W的功率处理能力，该产品在高压、高功率的应用中表现出色，适合电源管理、开关电源、直流到直流转换器（DC-DC转换器）、逆变器以及电机驱动等应用领域。
高耐压设计：SVF4N65DTR的650V耐压特性，使其在高电压环境下也能稳定工作，且可以有效防止意外过电压引起的元件损坏。这一特性使其非常适合用于电源模块和高压电源线路。
出色的导通电阻：该MOSFET具有较低的导通电阻（RDS(on)），在开关工作状态下能够实现更高的效率和更低的能量损耗，减少了热量产生，从而提升了电路的整体性能。
良好的电流处理能力：SVF4N65DTR额定的4A电流能力，使其能在大多数高功率应用中实现有效驱动。这一特性结合650V的高耐压，使其在电机驱动应用中能高效地控制负载。
封装优势：采用TO-252-2（DPAK）封装，SVF4N65DTR不仅具备良好的散热性能，方便PCB的紧凑设计，同时也易于自动化焊接，适合大规模生产的需求。
三、应用领域
SVF4N65DTR的设计特别适合以下应用场景：
电源管理：在工业和消费电子产品中广泛使用的开关电源和低功耗电源管理电路中，SVF4N65DTR由于其高效率和良好的热稳定性，可以显著提高整体电源的可靠性和性能。
逆变器：无论是在可再生能源如太阳能发电，还是在电动车和电动工具的电源转换中，SVF4N65DTR都卓有成效地可用于DCAC逆变，提升能量转换效率。
电机驱动：在直流电机和步进电机的控制中，SVF4N65DTR为电机控制器提供高效的开关能力，帮助提升电机的响应速度和整体工作效率。
充电器和适配器：该MOSFET的高电压和较低的导通电阻使其非常适合高效的充电器和适配器设计。它能有效管控电流，确保设备安全工作。
四、总结
SVF4N65DTR以其卓越的电压、电流特性以及良好的散热性能，逐步在各类电源管理、高压应用和电动机控制领域占据一席之地。其厂商SILAN（士兰微）凭借强大的技术背景与良好的市场口碑，推出的SVF4N65DTR成为工程师、设计师在高压、高功率应用中值得信赖的选择。选择SVF4N65DTR将确保您的电子产品具备更高的性能、效率与可靠性。
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