Model & package intelligence
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SILAN SVF4N60F
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- SILAN SVF4N60F
- Type
- SILAN
- Unit
- Electronic Component
- Minimum package
- 1000 管
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- SILAN
- Electronic Component
- SVF4N60F
- Electronic Component
- 1
- Package
- TO-220F-3
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 3g
- Electronic Component
- 1
- Electronic Component
- BM0000288475
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 33W
- Electronic Component
- Electronic Component
- Electronic Component
- 1000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SVF4N60F 产品概述
SVF4N60F 是一款高性能的 N 沟道 MOSFET，设计用于需要高电压和中等功率的应用场景。该器件的主要参数包括：漏源电压（Vdss）为 600V，连续漏极电流（Id）为 4A（在 25°C 下），以及漏源导通电阻（Rds(on)）为 2.4Ω（在 2A、10V 条件下）。其最大功率耗散能力为 33W，展现出优秀的热管理性能。该产品采用了 TO-220F 封装形式，易于散热和安装，适合在各种电力电子应用中使用。
组件特点
- 高电压能力：SVF4N60F 的漏源电压高达 600V，适合高电压电源管理和继电控制电路。
- 稳健的电流处理能力：在 25°C 环境温度下，器件能够承载连续漏极电流 4A。这使其适用于高电流负载的驱动和控制应用。
- 低导通电阻：具有 2.4Ω 的导通电阻，在高电流应用下，能够提供较低的功耗和发热量，从而提升系统整体效能。
- 较高的功率耗散能力：最大功率耗散为 33W，使其适合高功率应用，能够在保持高效率的同时，有效管理热量。
应用场景
SVF4N60F 适用于多种电子电路和应用场合，包括但不限于：
- 开关电源：作为开关管，SVF4N60F 能实现高效的电源转换，适合各种功率电源设计。
- 马达驱动：在工业马达驱动应用中，SVF4N60F 能提供平稳的电流控制，确保电机的稳定运行。
- 电磁继电器：可以用于开关控制电路，承载高压开关的需求，适合在家电、工业控制等领域。
- LED 驱动：用于高效的 LED 驱动电路，提高能效和灯具的使用寿命。
额外优势
该产品还具备良好的电气参数稳定性和耐用性，确保在极端工作条件下依然能够保持良好的性能。SVF4N60F 的设计考虑了各种电磁干扰和热管理需求，适合在高温和高电压环境中使用。此外，TO-220F 封装设计使得该器件便于散热和安装，有利于简化设计难度和提升系统整体性能。
总结
总之，SVF4N60F 是一款性能优异的 N 沟道 MOSFET，凭借其高电压处理能力、稳健的电流承载能力和低导通电阻，成为电力电子领域中的理想选择。无论在开关电源、马达驱动、LED 驱动还是电磁继电器控制中，SVF4N60F 都展现出非凡的性能和可靠性，为电子设计师提供了一个高效、稳定的解决方案。选择 SVF4N60F，能够为您提升产品的性能、可靠性和市场竞争力。
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