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SILAN SVF7N60F
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- SILAN SVF7N60F
- Type
- SILAN
- Unit
- Electronic Component
- Minimum package
- 50 管
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- SILAN
- Electronic Component
- SVF7N60F
- Electronic Component
- 1
- Package
- TO-220F-3
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 3g
- Electronic Component
- 1
- Electronic Component
- BM0058399067
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 45W
- Electronic Component
- Electronic Component
- Electronic Component
- 50
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SVF7N60F 产品概述
一、产品简介
SVF7N60F 是一款高性能N沟道场效应管（MOSFET），其具备600V漏源电压和7A的连续漏极电流，专为高压和高效率的电源管理应用而设计。该产品由士兰微（Silan）制造，采用TO-220F塑封封装，具有优良的散热性能和稳定性，广泛应用于开关电源、逆变器、驱动电路等领域。
二、主要技术参数
漏源电压（Vdss）: 600V
- 该器件能够承受高达600V的漏源电压，使其适合于高压电源应用。
连续漏极电流（Id）: 7A（25°C时）
- SVF7N60F能够在25°C的环境温度下持续工作在7A的漏极电流，对于需要高电流处理中较强的电流驱动能力。
栅源极阈值电压（Vgs(th)）: 4V @ 250uA
- 此MOSFET的栅源极阈值电压相对适中，可实现高效的栅极驱动，从而降低功耗。
漏源导通电阻（Rds(on)）: 1.2Ω @ 3.5A, 10V
- 低导通电阻保证了在额定电流下的高效率和低热量产生，适合需要频繁开关的操作环境。
最大功率耗散（Pd）: 45W（Ta=25°C）
- 器件的最大功率耗散能力为45W，使其在高功率应用下能够有效运行，并防止过热。
封装类型: TO-220F
- TO-220F封装是专为需要散热的应用设计的，便于在电路板上布置和散热管理。
三、应用场景
SVF7N60F广泛应用于以下领域：
开关电源（SMPS）: 在开关电源中，SVF7N60F可用于电源控制部分，保证能量高效传输和转换。
逆变器: 作为逆变器电路的主要开关元件，实现直流到交流的高效转化，适用于太阳能和风能发电系统。
电动机驱动: 在电动机驱动中，SVF7N60F可以有效控制电动机的启停和调速，提供稳定的功率输出。
氙气灯控制: 使用于车辆氙气灯的点火和功率控制。
四、产品优势
- 高压高流设计: 600V的漏源电压和7A的漏极电流，使其能够满足多种高压应用的需求。
- 低导通电阻: 通过优良的Rds(on)性能，明显减少开关损耗，提升系统效率。
- 优异的散热性: TO-220F封装设计有效提升散热能力，确保在高功率输出时仍能保持稳定性。
- 可靠的经济性: 相较于同类产品，SVF7N60F在保持高性能的同时，具备较好的性价比，适合大规模应用。
结论
SVF7N60F作为一款高性能的N沟道MOSFET，凭借其600V的高耐压、7A的高电流及低导通电阻等优势，在多种高压电源和驱动应用中展现出优异的性能和可靠性。无论是在工业自动化、可再生能源还是其他电子设备中，SVF7N60F都将是您理想的选择，以实现高效、稳定的电源管理和控制。
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