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SILAN SVF12N60F
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- SILAN SVF12N60F
- Type
- SILAN
- Unit
- Electronic Component
- Minimum package
- 50 管
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- SILAN
- Electronic Component
- SVF12N60F
- Electronic Component
- 1
- Package
- TO-220F-3
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 2.3g
- Electronic Component
- 1
- Electronic Component
- BM0000288474
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 51W
- Electronic Component
- Electronic Component
- Electronic Component
- 50
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SVF12N60F 产品概述
SVF12N60F 是一款高性能的 N 沟道 MOSFET，由士兰微（Silan）生产，属于 TO-220F 封装类型。这款器件设计用于高压和高电流的应用，其优秀的电气性能使其在各种电子电路中得到广泛应用，包括开关电源、逆变器、电机驱动和其他高效能电源管理系统。
主要参数
漏源电压（Vdss）: 600V
- SVF12N60F 的漏源电压能够承受高达 600V 的电压，适用于高压供电系统以及电力变换设备。
连续漏极电流（Id）: 12A (在 25°C 时)
- 其最大连续漏极电流为 12A，使得 SVF12N60F 能够满足大多数中型功率电路的需求。
栅源极阈值电压: 4V @ 250uA
- 栅源极阈值电压为 4V，能够有效降低驱动电压的要求，简化了电路设计。
漏源导通电阻: 750mΩ @ 6A, 10V
- 低导通电阻（Rds(on)）能够显著降低功率损耗，提升电路的整体能效，特别适合高频开关应用。
最大功率耗散: 51W (在 Ta=25°C 时)
- 具备较高的功率耗散能力，能在散热条件良好的环境下稳定工作。
封装与散热
SVF12N60F 采用 TO-220F 塑封封装，适合快速散热设计。其引脚布局设计合理，便于与印刷电路板（PCB）连接，提供了良好的散热路径。这使得该 MOSFET 在使用时能够更高效地释放产生的热量，从而提高了设备的可靠性和稳定性。
应用场景
SVF12N60F 并不是仅限于单一的应用领域，其灵活的性能使之广泛适用于如下一些领域：
开关电源：可以在各种电源转换器中作为开关元件，用于调节输出电压和电流。
逆变器：在将直流电（DC）转换为交流电（AC）的过程中，SVF12N60F 可作为主要的开关元件，提升系统效率。
电机驱动：在驱动直流电机和步进电机方面，其高电流承载能力及低导通电阻的特性有效提高了驱动器的性能。
LED 驱动：能够用于 LED 照明系统的驱动电路中，实现高效率的电源管理。
电力转换系统：在电力电子设备中可用于保护和控制电路，满足系统高可靠性和长寿命的要求。
总结
SVF12N60F 是一款高效能、高稳定性的 N 沟道 MOSFET，具有较高的漏源电压和连续电流承载能力，适合多种高性能电源管理应用。其低导通电阻和优良的功率耗散特性，使其在各类电路设计中都具备了极好的表现和竞争力。选择 SVF12N60F 将为电子设计提供更高的灵活性和性能保障，是各类电源和驱动电路中不可或缺的重要元件。
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