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SILAN SVF10N60F
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- SILAN SVF10N60F
- Type
- SILAN
- Unit
- Electronic Component
- Minimum package
- 1000
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- SILAN
- Electronic Component
- SVF10N60F
- Electronic Component
- 1
- Package
- TO-220F-3
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 2.44g
- Electronic Component
- 1
- Electronic Component
- BM0000287451
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 50W
- Electronic Component
- 1000
- Voltage(Vdss)
- 600V
- Capacitor(Ciss)
- 1.086nF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SVF10N60F 产品概述
一、基本信息
SVF10N60F 是一款由士兰微（Silan）生产的 N 沟道场效应管（MOSFET），其封装形式为 TO-220F，适合于多种高压、高功率应用。该产品最大漏源电压为 600V，能够承受的连续漏极电流为 10A（在 25°C 温度条件下），并具备较低的漏源导通电阻 1Ω（在 5A 和 10V 的测试条件下），其最大功率耗散能力为 50W（在环境温度为 25°C 时）。这些参数使得 SVF10N60F 在电力电子和高压应用中具有广泛的适用性。
二、产品特性
高压性能： SVF10N60F 的漏源电压 Vdss 高达 600V，意味着该MOSFET 能够在高压环境中正常工作，适合用于开关电源、逆变器、马达驱动等电力转换设备。
高电流处理能力： 该器件的连续漏极电流（Id）为 10A，提供了良好的电流处理能力。这在实际应用中，尤其是在电源转换和控制领域，可以确保系统的稳定性和安全性。
低导通电阻： SVF10N60F 的漏源导通电阻达到 1Ω（在5A和10V下测试），较低的导通电阻意味着在高电流工作时可以显著降低功耗及发热，提高整体效率。
合理的功率耗散： 最大功率耗散为 50W，使其可以在较高功率条件下运行而不会过热。在实际应用中，合理的散热设计可以进一步提升其工作性能。
阈值电压： 该器件的栅源极阈值电压为 4V（在 250uA 下测得），这使得 SVF10N60F 可与多种驱动电路兼容，便于在低电压条件下实现高效开关控制。
三、应用场景
SVF10N60F 的设计使其非常适合用于以下几个主要场景：
开关电源： 在各种电源转换应用中，包括AC/DC转换、DC/DC变换器，该MOSFET能够高效地实现开关控制，从而提高系统的能量转换效率。
逆变器： 在可再生能源系统中，如太阳能逆变器和风能逆变器，SVF10N60F 可以作为功率开关，用于将直流电转换为交流电，提供给电网或负载。
马达驱动： 在电动机控制系统中，该器件能作为高效的开关元件，实现对电机的驱动和控制，适用于各类电动工具和电动车辆。
照明设备： 该MOSFET 也可在LED驱动电源中使用，作为开关元件，实现精确的照明控制。
四、结论
SVF10N60F 是一款高性能的 N 沟道 MOSFET，其600V的高压特性、出色的电流处理能力、低导通电阻和合理的功率耗散能力，使得它在多种电力电子应用中具备显著优势。无论是在电源供应、马达控制还是逆变器等领域，这款MOSFET都是一个可靠的选择。随着电子设备对高效、高可靠性元件需求的不断提升，SVF10N60F 将凭借其优异的性能，成为市场中广泛应用的重要电子元器件之一。
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