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SILAN SVT042R5NT
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- SILAN SVT042R5NT
- Type
- SILAN
- Minimum package
- 1000 盒
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- SILAN
- Electronic Component
- SVT042R5NT
- Electronic Component
- 1
- Package
- TO-220-3L
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 2.05g
- Electronic Component
- 1
- Electronic Component
- BM0258715515
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 250W
- Electronic Component
- Electronic Component
- Electronic Component
- 1000
- Voltage(Vdss)
- 40V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SVT042R5NT (TO-220) 产品概述
一、概述
SVT042R5NT 是士兰微（SILAN）推出的一款高电流、低导通损耗 N 沟道功率 MOSFET，采用 TO-220-3L 封装。器件额定漏源电压 Vdss 为 40V，连续漏极电流高达 174A，典型导通电阻 RDS(on) 为 2mΩ（Vgs=10V），适合需要高电流通断能力且对导通损耗敏感的场合。
二、主要电气参数
- 漏源电压（Vdss）：40V
- 连续漏极电流（Id）：174A
- 导通电阻（RDS(on)）：2mΩ @ Vgs=10V
- 阈值电压（Vgs(th)）：3.8V @ 250µA
- 耗散功率（Pd）：250W（封装极限，实际需与散热条件配合）
- 总栅极电荷（Qg）：108nC @ 10V
- 输入电容（Ciss）：5.7nF；输出电容（Coss）：770pF；反向传输电容（Crss）：520pF
- 工作温度范围：-55℃ ~ +150℃
三、性能特点与典型应用
- 低 RDS(on) 与高电流能力，使其在 DC–DC 同步整流、服务器/电信电源、PFC、电机驱动及大电流开关负载场合表现优异。
- 较大的栅极电荷（108nC）表明器件在开关时需要较高驱动能量，适合配合大电流强驱动器或采用较慢边沿以平衡开关损耗与开关应力的设计。
- 较高的 Crss 及 Coss 值对开关过渡及反充电有影响，设计需考虑振铃抑制与驻波控制。
四、散热与布局建议
- 虽然封装 Pd 标称 250W，但需要配合合适散热器或 PCB 大铜面进行热设计。
- 建议尽量缩短漏极—源极的电流回路路径、使用粗短导线或加焊铜柱以降低寄生电感和接触电阻。
- 对栅极建议布置近距离驱动层并加入合理的栅阻（数Ω至数十Ω）以抑制振铃并控制开关速率。
五、驱动与保护设计要点
- 由于 Vgs(th)≈3.8V，要求栅极驱动电压通常提升至 10V 以保证低 RDS(on)；驱动器需能提供瞬时充放电 Qg≈108nC 的电流能力。
- 在高频开关应用中应考虑栅极电阻、吸收电路（RC、TVS）及合适的续流/反向保护以防止过冲与功率器件应力集中。
- 若用于同步整流或桥式开关，注意交越导通（shoot-through）管理与死区时间优化。
六、选型与可靠性提示
- 评估器件时应以实际工作条件（脉冲/占空比、频率、环境温度及散热措施）重新计算结温与 SOA。
- 对于高开关频率或要求极低开关损耗的设计，可在保持电流能力的前提下比较其他低 Qg 或更低 Crss 的器件选择。
总结：SVT042R5NT 在 40V 电压等级下提供极佳的导通电阻与大电流能力，是中高功率开关及同期整流场合的优选，但需配合合适的驱动和散热设计以发挥其最佳性能。
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