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SILAN SVF23N50PN
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- SILAN SVF23N50PN
- Type
- SILAN
- Minimum package
- 600
Technical parameters
- Electronic Component
- SILAN
- Electronic Component
- SVF23N50PN
- Electronic Component
- 1
- Package
- TO-3P-3
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 6.56g
- Electronic Component
- 1
- Electronic Component
- BM0232299280
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 280W
- Electronic Component
- 600
- Voltage(Vdss)
- 500V
- Capacitor(Ciss)
- 2.5958nF
- Output Capacitor(Coss)
- 343.8pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SVF23N50PN 产品概述
一、概述
SVF23N50PN 是士兰微（SILAN）推出的一款高压 N 沟道功率 MOSFET，适用于需要 500V 等级耐压与中等电流能力的功率开关场合。器件具备较高的击穿电压与良好的开关性能，适合用于开关电源、逆变器、功率变换与电机驱动等工业级应用。
二、主要电气参数
- 漏源电压 Vdss：500 V
- 连续漏极电流 Id：23 A
- 导通电阻 RDS(on)：210 mΩ @ Vgs=10 V
- 最大耗散功率 Pd：280 W（裸片/良好散热条件下）
- 阈值电压 Vgs(th)：4 V @ Id=250 μA
- 总栅极电荷 Qg：42.51 nC @ Vgs=10 V
- 输入电容 Ciss：2.5958 nF
- 输出电容 Coss：343.8 pF
- 反向传输电容 Crss：10.1 pF
- 工作温度范围：-55 ℃ ~ +150 ℃
- 类型：N 沟道 MOSFET；封装：TO-3P-3；数量：1 只
三、器件特点与优势
- 高耐压：500 V 额定耐压可满足中高压电源与功率变换场景的安全余量。
- 合理的导通电阻与电流能力：23 A 连续电流与 210 mΩ 的 RDS(on) 在中等功率等级中兼顾损耗与成本。
- 较大的栅极电荷与输入电容提示在高频开关时需要考虑驱动能量，但能提供稳定的开关过渡特性。
- 宽工作温度和较高耗散功率：适用于工业环境并可在有良好散热措施下承受较大功率损耗。
四、典型应用场景
- 开关电源（SMPS）高压开关管
- 功率因数校正（PFC）电路
- 高频逆变器与变频驱动
- 工业电源与电源模块的主开关元件
五、选型与使用建议
- 若用于高频开关（几十到几百 kHz），需注意 Qg 较大，选择相匹配的栅极驱动器并评估驱动损耗。
- 散热设计要充分考虑 Pd 与实际结-壳、壳-散热器热阻，必要时采用强制风冷或大面积散热片。
- 当工作在脉冲或短时峰值电流下，应参考器件脉冲电流能力和热循环应力。
- 对抗高压浪涌与反向峰值电压，应配合合适的吸收和限流元件保护。
六、可靠性与封装
TO-3P-3 封装适合在要求较好散热路径的应用中使用，便于与散热片机械固定并实现大功率散热。工作温度范围宽、封装机械强度高，适合工业级长期运行。
总结：SVF23N50PN 是一款面向中高压功率转换的 N 沟道 MOSFET，兼顾耐压、安全余量与成本效益，适合多种工业电源与驱动场合。选型时需综合考虑开关频率、栅极驱动和散热方案以发挥其最佳性能。
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