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STE T08F1D222MN0B0S0N0
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- STE T08F1D222MN0B0S0N0
- Type
- STE
- Minimum package
- 1000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- STE
- Electronic Component
- T08F1D222MN0B0S0N0
- Electronic Component
- 1
- Electronic Component
- 2.2nF
- Package
- P=10mm
- Electronic Component
- Through-hole Capacitor
- Electronic Component
- ±20%
- Electronic Component
- 0.53g
- Pitch
- 10mm
- Electronic Component
- 1
- Electronic Component
- BM0266019557
- Electronic Component
- Y5V
- Voltage
- 4kV
- Capacitor
- 3.5mm
- Capacitor
- 7mm
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
T08F1D222MN0B0S0N0 直插高压瓷片电容产品概述
一、产品核心定位与典型应用场景
T08F1D222MN0B0S0N0是一款工业级径向直插高压瓷片电容，由国内知名被动元件厂商STE（松田）研发生产，核心定位为中高压电路的滤波、耦合与隔离元件，适配需要插件安装、高压耐受且对容量精度要求适中的场景。其典型应用包括：
- 工业高压电源：开关电源、逆变电源的高压滤波环节，抑制纹波干扰；
- 医疗设备电路：X光机、高频理疗设备的高压信号耦合，保障电气安全；
- 工业控制：高压传感器、继电器驱动电路的隔离耦合，实现高低压电路分离；
- 高压照明：高压LED驱动电源的滤波，提升驱动效率与稳定性。
二、关键电气参数与性能特性
该电容的核心参数与性能特点可满足多数高压场景需求：
参数项 规格值 性能说明 标称容值 2.2nF（222） 符合E24系列标准，适配常规滤波、耦合的容量需求 容值精度 ±20% 平衡成本与性能，适合对精度要求不苛刻的高压应用 额定电压 4kV（DC） 直流额定电压，可耐受低频交流高压（50/60Hz下≤3kV峰值），避免过压损坏 温度系数 Y5V 工作温度-30℃~+85℃，容值变化±20%，适配工业环境的温度波动 绝缘电阻 ≥10¹²Ω 高压下漏电流极小，减少对电路的干扰（符合STE高压电容标准）其中，Y5V温度系数是核心优势：虽容量随温度有波动，但成本远低于NPO等高精度系数电容，适合高压场景的性价比需求。
三、封装结构与物理尺寸
该电容采用径向引线直插封装，尺寸紧凑且兼容标准插件规范：
- 引脚间距（P）：10mm，匹配多数电路板通孔间距，安装无兼容性问题；
- 电容体尺寸：直径7mm、厚度3.5mm，体积小巧，适配空间有限的电路板；
- 引线材质：铜镀锡，焊接性能优异，耐氧化能力强，长期使用不易虚焊。
径向引线结构的优势在于：无需区分极性，焊接操作简单；引脚可按需裁剪，适配不同厚度电路板。电容体尺寸既保证了高压爬电距离（符合GB/T 1403标准），又节省了电路板空间。
四、品牌与可靠性保障
STE（松田）作为国内老牌被动元件厂商，该电容继承了品牌的可靠性优势：
- 认证合规：符合RoHS 2.0、REACH环保标准，无有害物质；
- 高压可靠性：100%经过4kV DC耐压测试（保持10秒无击穿），长期工作电压≤3kV时寿命超10万小时；
- 参数一致性：批量生产中容值、耐压波动小，减少电路调试难度。
此外，STE优化了陶瓷介质烧结、电极涂覆工艺，确保电容在高压环境下的稳定性，避免介质击穿故障。
五、选型与使用注意事项
为保障性能与寿命，使用时需注意：
- 电压匹配：工作电压≤4kV DC，交流电路需控制峰值≤3kV；
- 温度控制：避免超-30℃~+85℃范围，防止容值波动或介质老化；
- 焊接规范：烙铁温度≤350℃，焊接时间≤3秒，避免高温开裂；
- 绝缘防护：电容体与周围元件爬电距离≥2mm，必要时加绝缘套管；
- 精度适配：高精度场景需搭配校准电路，或选择±10%精度型号。
综上，T08F1D222MN0B0S0N0凭借高压耐受、插件兼容、成本优势，成为工业、医疗等领域中高压电路的优选元件，适合对安装方便、性能稳定有要求的应用场景。
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