WMSIC Electronic Components

TDK MPZ1005S121ETD25

ModelMPZ1005S121ETD25
Package0402
BrandTDK
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

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Technical data

Product details

20 specifications

Core information

Product name
TDK MPZ1005S121ETD25
Type
TDK
Unit
Electronic Component
Minimum package
10000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
TDK
Electronic Component
MPZ1005S121ETD25
Electronic Component
1
Package
0402
Electronic Component
Ferrite Bead
Electronic Component
±25%
Electronic Component
0.012g
Electronic Component
1
Channel Count
1
Electronic Component
BM0209600398
Operating Temperature
55℃~+125℃
Current
1.5A
@Frequency
120Ω@100MHz
Resistor(DCR)
95mΩ

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MPZ1005S121ETD25 产品概述

一、产品简介

MPZ1005S121ETD25 为一款小型表面贴装磁珠(ferrite bead),封装尺寸为 0402。该器件在 100 MHz 时提供 120 Ω 的阻抗,直流电阻(DCR)约为 95 mΩ,阻抗公差 ±25%,额定电流 1.5 A,工作温度范围为 -55 ℃ 到 +125 ℃,单通道结构。适用于对空间和成本敏感的电子产品中进行射频干扰(EMI)抑制与高频噪声衰减。

二、主要参数

  • 阻抗:120 Ω @ 100 MHz(标称)
  • 直流电阻(DCR):95 mΩ
  • 公差:±25%(阻抗公差)
  • 额定电流:1.5 A
  • 通道数:1(单通道)
  • 工作温度:-55 ℃ ~ +125 ℃
  • 封装:0402(小尺寸,适合高密度 PCB)

三、优势与适用场景

  • 体积小、适合高密度布板:0402 封装利于在空间受限的移动设备、可穿戴设备、物联网终端及消费类电子中使用。
  • 高频抑制能力强:100 MHz 附近提供较高阻抗,能有效抑制来自电源线或信号线的高频干扰。
  • 低直流损耗:95 mΩ 的 DCR 带来较低的压降和发热,在要求较高电流传输时可保持较小的功率损耗。
  • 宽温度范围:-55~125 ℃ 使其可胜任一般工业及消费级环境。

典型应用包括电源线路噪声滤除、数字/射频信号线前端抑制、稳压器输出旁路、接口滤波(USB、I2C、UART 等)以及 EMI 合规设计中的局部滤波单元。

四、使用与设计要点

  • 阻抗公差对滤波效果有影响,设计时应考虑 ±25% 的当量范围,必要时通过实验验证实际频率响应。
  • 磁珠的阻抗曲线通常随频率和直流偏置电流(DC bias)变化,额定 1.5 A 接近或超过时,磁性材料的有效阻抗可能下降,建议在目标工作电流下查看厂方阻抗-电流特性曲线。
  • 虽然 DCR 较低,但在长期高电流运行或狭小散热条件下仍需关注温升与热耗散,必要时做温升测量或适当降额使用。
  • 0402 封装对焊接工艺敏感,需按推荐回流曲线操作,避免过烙或冷焊。

五、PCB 布局与焊接建议

  • 将磁珠尽量靠近噪声源(如电源输出引脚、开关元件或敏感 IC)布置,以最小化噪声耦合路径。
  • 保持输入/输出短而直接的走线,避免形成环路面积增加耦合。
  • 采用适当的焊盘尺寸与阻焊开窗,确保良好焊接强度与热传导。
  • 对于高速信号路径,注意与阻抗控制要求的权衡:磁珠用于抑制高频干扰,但在差分对或受控阻抗线上的使用需谨慎验证信号完整性。

六、可靠性与验证建议

  • 在最终设计中做频率响应(阻抗-频率曲线)、插入损耗和在工作电流下的阻抗跌落测试。
  • 进行温升、热循环与机械震动/振动测试以验证封装与焊点可靠性。
  • 若用于关键或严苛环境(如汽车电子),应结合供应商的数据表和认证信息评估是否满足相应规范。

七、结论

MPZ1005S121ETD25 为一颗小尺寸、适用于高频 EMI 抑制的磁珠元件,适合在空间受限且需控制高频噪声的电路中使用。其 120 Ω @ 100 MHz 的标称阻抗、低 DCR 和 1.5 A 的额定电流提供了在功耗和抑制效果之间的良好平衡。但在实际设计中,应关注阻抗公差、直流偏置效应与热管理,按照厂商数据表完成必要的验证与测试,确保在目标工况下达到预期的滤波与可靠性表现。

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