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TDK C1005X5R1A475KTJ00E
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
16
specifications
Core information
- Product name
- TDK C1005X5R1A475KTJ00E
- Type
- TDK
- Minimum package
- 10000
Technical parameters
- Electronic Component
- TDK
- Electronic Component
- C1005X5R1A475KTJ00E
- Electronic Component
- 1
- Electronic Component
- 4.7uF
- Package
- 0402
- Electronic Component
- SMD Capacitor(MLCC)
- Electronic Component
- ±10%
- Electronic Component
- 0.012g
- Electronic Component
- 1
- Electronic Component
- BM0230039534
- Electronic Component
- X5R
- Voltage
- 10V
- Electronic Component
- 10000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
TDK C1005X5R1A475KTJ00E 产品概述
TDK C1005X5R1A475KTJ00E 是一款小型多层陶瓷贴片电容（MLCC），标称容量 4.7 µF，公差 ±10%，额定电压 10 V，介电材料为 X5R，封装尺寸 0402（1005公制）。该器件面向对体积和频率响应有较高要求的移动设备和高密度电路板的去耦、滤波场合。
一、主要参数
- 容值：4.7 µF
- 精度：±10%
- 额定电压：10 V
- 介电类型：X5R（工作温度范围通常为 -55°C 至 +85°C，温度特性在此范围内电容量变化受限）
- 封装：0402（1005）贴片
- 制造商：TDK
二、性能与特点
- 体积小、容量高：在 0402 小封装中实现 µF 量级电容，便于高密度布局。
- 低 ESR/低 ESL：适合做电源去耦和高频旁路，能快速抑制瞬态噪声。
- X5R 特性：温度范围内电容量相对稳定，但属于Ⅱ类陶瓷，随温度和时间存在一定变化。
- 直流偏置效应明显：在高电场下（靠近额定电压）有效电容量会下降，设计时应考虑这一点。
三、典型应用
- 数字芯片、射频/模拟芯片的去耦/旁路。
- DC-DC 转换器的输入/输出滤波与退耦。
- 移动终端、可穿戴设备、消费电子的高密度电路板。
注：不适合作为长期储能或精密计时回路的主容值来源（电容量受偏压、温度与老化影响）。
四、设计与使用建议
- 考虑 DC 偏置：在靠近或等于额定电压工作时，实际容量会显著下降。关键滤波点建议并联多个电容或选用额定电压更高的器件以确保有效容量。
- 并联布局：为兼顾低频和高频响应，可与较小容量、低 ESL 的 MLCC 并联使用。
- 电压裕量：在对容量稳定性和可靠性要求较高的场合，避免长期在额定电压下使用，留有余量。
五、布局与焊接注意
- 安装位置靠近被去耦器件，走线最短、焊盘对称以降低 ESL。
- 避免 PCB 弯曲或靠近插拔受力点，0402 小封装对机械应力和焊接应力敏感，可能引起端电极裂纹。
- 按 TDK 推荐的焊盘和回流焊工艺进行焊接，遵循厂商的回流曲线与焊接温度限制以防裂纹或性能退化。
六、可靠性与储存
- X5R 型陶瓷存在随时间的老化（电容量逐步下降），受高温可部分恢复，设计时应考虑此特性。
- 建议按厂家包装（卷带）保存，避免长期潮湿、高温环境，装配前遵循干燥与储存规范。
- 对关键应用建议参考 TDK 官方数据手册中的偏压曲线、温度特性和可靠性测试结果，进行样机验证。
总结：C1005X5R1A475KTJ00E 在空间受限的高密度应用中提供了较高的容值和良好的高频特性，但受 X5R 介质的偏压、温度与老化影响，设计时需合理并联、预留裕量并遵循厂商装配规范以确保长期稳定性。若需精确的偏压曲线、ESR/ESL 数据或回流参数，请参考 TDK 数据手册或向供应商索取。
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