WMSIC Electronic Components

TDK MMZ0603F560ET000

ModelMMZ0603F560ET000
Package0201
BrandTDK
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
TDK MMZ0603F560ET000
Type
TDK
Unit
Electronic Component
Minimum package
15000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
TDK
Electronic Component
MMZ0603F560ET000
Electronic Component
1
Package
0201
Electronic Component
Ferrite Bead
Electronic Component
±25%
Electronic Component
0.009g
Electronic Component
1
Channel Count
1
Electronic Component
BM0265694506
Current
150mA
@Frequency
56Ω@100MHz
Resistor(DCR)
1.9Ω
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

TDK MMZ0603F560ET000 铁氧体磁珠产品概述

TDK MMZ0603F560ET000是一款专为小型化电子设备设计的单通道片式铁氧体磁珠,核心用于抑制100MHz左右中高频电磁干扰(EMI),适配高密度PCB布局需求,以下从核心定位、性能参数、封装工艺、可靠性及应用注意事项展开详细说明。

一、产品核心定位与典型应用场景

本产品属于TDK“MLZ系列”片式铁氧体磁珠的细分型号,针对100MHz左右中高频干扰优化设计,单通道结构适合单路信号或电源的滤波需求,典型应用场景包括:

  • 消费电子:智能手机、TWS耳机、智能手环等可穿戴设备的射频前端(RF Front-end)滤波,减少射频信号与数字信号间的干扰;
  • IoT模块:低功耗蓝牙(BLE)、Wi-Fi模块的电源输入滤波,抑制模块工作时产生的高频噪声;
  • 小型电子设备:智能电表、智能家居传感器的高速数据总线(如I2C、SPI)滤波,避免总线干扰导致的通信误码;
  • 工业控制:小型PLC、传感器节点的电源线路EMI抑制,满足工业级电磁兼容(EMC)要求。

二、关键电气性能参数详解

本产品的电气参数针对中高频干扰抑制与低直流损耗优化,核心参数如下:

1. 交流阻抗特性

  • 测试频率:100MHz(行业内铁氧体磁珠的典型测试频率,对应常见射频干扰频段);
  • 阻抗值:56Ω,误差范围±25%(实际阻抗在42Ω~70Ω之间,符合工业级器件常规公差);
  • 关键说明:铁氧体磁珠的阻抗为交流复合阻抗(由电感分量与电阻分量共同决定),随频率变化显著——100MHz附近阻抗达峰值,可有效吸收该频段干扰能量,对低频信号(直流、1MHz以下)衰减极小,不影响信号传输。

2. 直流电阻(DCR)

  • 典型值:1.9Ω;
  • 实际意义:DCR是直流电流通过磁珠时的电阻,直接影响直流损耗与电压压降。以额定电流150mA计算,直流压降为1.9Ω×0.15A=0.285V,属于低损耗范围,避免对敏感电路(如MCU供电、射频电源)造成明显电压损失。

3. 额定电流与功率

  • 额定电流(Imax):150mA(25℃环境下的长期工作电流);
  • 最大功耗:约0.0428W(由Imax²×DCR计算),远低于热功率极限,确保长期可靠性。

三、物理封装与工艺特性

本产品采用主流小型化片式封装,适配SMT自动化生产:

1. 封装规格

  • 英制:0201(尺寸0.02英寸×0.01英寸);
  • 公制:0603(对应0.6mm×0.3mm×0.3mm,体积约0.054mm³);
  • 焊盘设计:符合IPC标准,推荐焊盘宽度0.3mm±0.1mm、长度0.4mm±0.1mm,确保焊接可靠性。

2. 工艺与材料优势

  • 结构:多层片式(MLCC类磁珠),铁氧体材料与内电极交替叠层,一致性好、稳定性高;
  • 电极:银钯(Ag-Pd)合金电极,兼容无铅焊接工艺(回流焊、波峰焊),符合RoHS环保要求;
  • 材料特性:TDK自研铁氧体材料温度系数低,在-55℃~125℃范围内性能稳定。

四、可靠性与环境适应性

本产品经过TDK严格可靠性测试,满足工业级与消费级市场需求:

1. 温度范围

  • 工作温度:-55℃~125℃(覆盖绝大多数电子设备环境,包括高温工业、低温户外场景);
  • 存储温度:-40℃~85℃(长期存储无性能衰减)。

2. 可靠性测试标准

  • 高温存储:125℃×1000h,阻抗/DC变化率≤±10%;
  • 温度循环:-55℃~125℃×1000次,无开裂、焊盘脱落;
  • 湿度测试:85℃/85%RH×1000h,阻抗/DC变化率≤±10%。

3. 环保合规

符合RoHS 2.0(无铅、无镉、无汞)、REACH法规(无SVHC高关注物质),满足全球市场要求。

五、选型与应用注意事项

为确保最佳效果,需注意以下要点:

1. 频率与阻抗匹配

  • 干扰集中在100MHz左右时,本产品56Ω阻抗可有效抑制;
  • 若干扰频率偏离(如<50MHz选低频磁珠、>200MHz选高频磁珠),需参考TDK选型手册。

2. 电流降额设计

  • 25℃时额定电流150mA,85℃时需降额至约105mA(参考TDK降额曲线);
  • 峰值电流超150mA时,需并联多颗或选更高额定电流型号(如MMZ0603S100AT000,300mA)。

3. 焊接与PCB布局

  • 焊接工艺:推荐回流焊(温度曲线:预热150180℃×60120s,峰值230245℃×1030s);
  • 布局原则:磁珠靠近干扰源/敏感电路,避免与高频信号线平行布线,减少串扰。

4. 通道数适配

本产品为单通道,多路滤波需并联多颗或选多通道型号(如MMZ1608D221AT000,双通道)。

六、总结

TDK MMZ0603F560ET000以100MHz下56Ω高阻抗、1.9Ω低DCR、150mA额定电流为核心优势,适配0201/0603封装,可有效抑制中高频EMI干扰,同时满足高密度PCB布局与低直流损耗需求,是智能手机、IoT模块、可穿戴设备等小型电子设备EMC设计的理想选择。

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