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TDK MLZ2012M6R8WT000
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- TDK MLZ2012M6R8WT000
- Type
- TDK
- Unit
- Electronic Component
- Minimum package
- 2000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- TDK
- Electronic Component
- MLZ2012M6R8WT000
- Electronic Component
- 1
- Package
- 0805
- Type
- Inductor
- Electronic Component
- SMD Inductor
- Electronic Component
- ±20%
- Electronic Component
- 0.042g
- Inductor
- 6.8uH
- Electronic Component
- 1
- Electronic Component
- BM0058431650
- Current
- 400mA
- Resistor(DCR)
- 400mΩ
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MLZ2012M6R8WT000 产品概述
一、产品简介
MLZ2012M6R8WT000 为 TDK 生产的贴片叠层电感，封装规格为 0805（公制 2012），标称电感值 6.8 µH，允差 ±20%。主要电气参数包括饱和电流 Isat = 220 mA、直流电阻 DCR = 400 mΩ、额定电流（温升限值）400 mA。体积小、工艺稳定，适用于空间受限的中低功率滤波与去耦场合。
二、电气参数解读与计算示例
- 电感值 6.8 µH ±20%：在无直流偏置时的标称值，实际应用中会随频率和直流偏置变化。
- 饱和电流 Isat = 220 mA：当通过直流电流达到该值时，电感量将显著下降（典型定义为下降到某一百分比）。
- 额定电流 400 mA：制造商规定在连续通过该电流时温升仍在允许范围内。
- DCR = 0.4 Ω：电阻较大，会带来直流损耗。举例：在 400 mA 时的铜损 P = I^2·R = 0.4^2×0.4 ≈ 0.064 W（约 64 mW）；在 220 mA 时损耗约 19 mW。
由此可见，当电路工作电流接近或超过 Isat，电感值会下降；当关注效率时，DCR 会直接影响功耗与温升。
三、封装与工艺注意
0805 尺寸（约 2.0 × 1.25 mm）便于高密度贴装。焊接采用常规回流工艺，布局时应避免施加机械应力或在贴片附近布置产生强磁场的器件。散热与电流走廊需考虑，必要时增加过孔或加宽铜箔以降低温升。
四、典型应用
适用于便携设备电源滤波、DC–DC 降压/升压电路的输出/输入滤波、EMI 抑制以及一般信号系统的去耦和噪声滤波。对需保持接近标称 6.8 µH 的应用，应确保实际工作电流远低于 Isat，或选用 Isat 更高的型号。
五、选型建议
- 若追求更低损耗与更高效率，应选择 DCR 更低或更大封装、不同磁芯材料的型号。
- 若电路有较大的直流偏置，应关注 L–I 曲线（电感随直流电流的衰减），并按需要留有裕量。
- 对热敏感设计推荐进行实测温升与频率响应验证，确保电感在工作频段与电流下满足系统需求。
总结：MLZ2012M6R8WT000 在小型化电源滤波与一般去耦场合表现平衡，但需注意 Isat（220 mA）相对较低以及 DCR 对功耗的影响，设计时按实际工作电流和效率要求综合评估。若需要，我可以帮您对比同类替代品或计算特定工况下的 L 值衰减与温升。
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