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TDK MLG1005S1N2BT000
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- TDK MLG1005S1N2BT000
- Type
- TDK
- Unit
- Electronic Component
- Minimum package
- 10000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- TDK
- Electronic Component
- MLG1005S1N2BT000
- Electronic Component
- 1
- Package
- 0402
- Type
- Inductor
- Electronic Component
- SMD Inductor
- Electronic Component
- 0.012g
- Inductor
- 1.2nH
- Electronic Component
- 1
- Factor
- 7@100MHz
- Electronic Component
- BM0058427608
- Current
- 1A
- Frequency
- 10GHz
- Resistor(DCR)
- 40mΩ
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MLG1005S1N2BT000 产品概述
一、概述
MLG1005S1N2BT000 为 TDK 推出的 0402 叠层高频片式电感，标称电感值 1.2 nH（0.0012 μH），专为 GHz 级高频应用设计。器件为无屏蔽结构、多层陶瓷工艺，体积小、寄生参数低、适合高密度表面贴装电路板。
二、主要电气参数（典型值）
- 电感值：1.2 nH
- 直流电阻（DCR）：约 40 mΩ
- 品质因数（Q）：7 @ 100 MHz
- 自谐振频率（SRF）：约 10 GHz
- 额定电流：1 A
- 封装：0402（公制 1005）
这些参数表明该器件在百兆到多 GHz 频段仍能保持较低损耗和较高自谐振点，适合射频/高频线路中用作阻抗控制或射频偏置元件。
三、特性与优势
- 高频性能好：SRF ≈ 10 GHz，适用于微波频段的阻抗项与去耦设计。
- 体积极小：0402 封装有利于高密度 PCB 布局。
- 低 DCR 与合理 Q 值：DCR ≈ 40 mΩ，额定 1 A 时功耗 P = I²R ≈ 40 mW，热耗影响小。
- 多层陶瓷工艺：良好的重复性与批次一致性，适合量产应用。
四、典型应用
- 无线通信射频前端：匹配网络、谐振与阻抗调整。
- 高频滤波与带通/带阻网络的构成元件。
- 射频偏置与馈通（RFC）元件，用于将直流与射频隔离。
- EMI/EMC 抑制中作为高频阻抗元件使用（需注意无屏蔽耦合）。
五、封装与布板建议
- 建议采用标准 0402 焊盘与回流工艺贴装，遵循 TDK 推荐的焊盘尺寸与回流曲线以保证焊接可靠性。
- 布局时尽量缩短与被滤波/匹配节点的连接长度，减少额外寄生电感与电阻。
- 由于为无屏蔽结构，避免与敏感接收天线或互调敏感电路并行过近，以防磁耦合影响系统性能。
- 高电流路径应提供足够的铜厚与散热通道，尽管单颗器件发热小，但并联或密集布局时需注意整体热管理。
六、选型与注意事项
- 若电路对耦合敏感或要求更高的磁隔离，可考虑屏蔽型芯片电感作为替代。
- 对于更高 Q 值或更低 DCR 的需求，可比较同系列不同标称电感或其他封装规格的器件。
- 在设计射频匹配网络时，应结合器件的频率响应曲线（S 参数或阻抗-频率特性）进行仿真与调试，避免仅以直流电感值作为唯一依据。
如需器件的详细频率响应曲线、封装尺寸图、回流焊工艺参数或样片测试报告，可进一步提供以便查询或获取原厂资料。
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