WMSIC Electronic Components

TDK MPZ1608Y101BTA00

ModelMPZ1608Y101BTA00
Package0603
BrandTDK
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
TDK MPZ1608Y101BTA00
Type
TDK
Unit
Electronic Component
Minimum package
4000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
TDK
Electronic Component
MPZ1608Y101BTA00
Electronic Component
1
Package
0603
Electronic Component
Ferrite Bead
Electronic Component
±25%
Electronic Component
0.032g
Electronic Component
1
Channel Count
1
Electronic Component
BM0228289707
Operating Temperature
55℃~+125℃
Current
2A
@Frequency
100Ω@100MHz
Resistor(DCR)
40mΩ

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MPZ1608Y101BTA00 产品概述

一、产品简介

TDK MPZ1608Y101BTA00 是一款 0603 封装(1608公制)单通道无源磁珠,用于高频干扰抑制与电磁兼容(EMC)设计。其在 100MHz 时标称阻抗为 100Ω(公差 ±25%),直流电阻(DCR)约为 40mΩ,额定通过电流 2A,工作温度范围 -55℃ 至 +125℃。该器件适合在空间与成本受限的电子产品中作为线性 EMI 抑制元件使用。

二、主要参数(概括)

  • 阻抗:100Ω @ 100MHz(±25%)
  • 直流电阻(DCR):40mΩ
  • 额定电流:2A
  • 通道数:1(单通道)
  • 工作温度:-55℃ ~ +125℃
  • 封装:0603(小型表贴)
  • 品牌:TDK

三、特点与优势

  • 高频抑制效果显著:在 100MHz 附近具有较高阻抗,可有效吸收并衰减射频噪声。
  • 低 DCR:40mΩ 的低直流电阻使其在电源线应用中造成的直流压降较小,适用于对压降敏感的电源轨。
  • 小型化封装:0603 封装便于在高密度 PCB 上布置,适合移动设备、通信模块和消费电子等紧凑型应用。
  • 宽温度范围:适应严苛环境的温度变化,可靠性高。

四、典型应用场景

  • 电源线 EMI 抑制:用于稳压器输出、PMIC 输入/输出、USB、摄像头模组供电等电源轨上。
  • 信号线干扰控制:在高速接口或模拟输入端前端用于抑制共模/差模的高频干扰(需评估阻抗对信号完整性的影响)。
  • PCB 屏蔽替代或补充:与去耦电容组合形成低通/π 型滤波网络,改善系统级 EMI。

五、布局与使用建议

  • 贴近噪声源或电路的入口处放置磁珠(例如稳压器输出端或接口进线处),以最大限度截获噪声。
  • 与旁路电容搭配使用,构成 LC/π 滤波,提高低频与高频的综合抑制效果。
  • 注意磁珠无极性,焊接方向不限;但焊接温度与回流曲线应遵循元件制造商的工艺建议,避免机械应力导致裂纹。
  • 在高速差分信号线上使用前须评估阻抗对信号的影响,必要时选用更低阻抗或专用差模抑制器件。

六、热与可靠性注意事项

  • 满载时的功耗估算:在 2A 电流下,理论功耗约为 P = I^2·R = 4·0.04 = 0.16W。小封装在长时间高功耗下会出现温升,建议在布局与散热设计上留意并考虑电流余量或并联器件以降低温升。
  • 避免在高应力机械环境(弯曲、冲击)中直接暴露元件,以防裂纹或性能退化。
  • 长期工作条件下,参考实际应用的交流电流谱与频率分布,评估磁珠在目标频段的阻抗变化及有效性。

七、选型建议与替代考虑

  • 若电流要求超过 2A,或关注更低 DCR 的应用场景,应考虑更大封装或专为电源轨设计的磁珠/共模滤波器。
  • 对阻抗容差敏感的设计(如精确滤波频率)应考虑阻抗公差对滤波效果的影响(±25%),或选择具有更窄公差的产品。
  • 在需要同时抑制差模与共模干扰的场合,可考虑使用共模电感或组合滤波方案。

八、采购与检测要点

  • 订货时确认完整料号与批次,核对出厂的阻抗测试频点与 DCR 数据。
  • 通过网络分析仪、LCR 表等在目标频段对样品进行阻抗与损耗测试,必要时复核温度漂移与大电流条件下的特性变化。

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