WMSIC Electronic Components

TDK C1005X6S1C105KT000E

ModelC1005X6S1C105KT000E
Package0402
BrandTDK
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

16 specifications

Core information

Product name
TDK C1005X6S1C105KT000E
Type
TDK
Minimum package
10000

Technical parameters

Electronic Component
TDK
Electronic Component
C1005X6S1C105KT000E
Electronic Component
1
Electronic Component
1uF
Package
0402
Electronic Component
SMD Capacitor(MLCC)
Electronic Component
±10%
Electronic Component
0.012g
Electronic Component
1
Electronic Component
BM0228037179
Electronic Component
X6S
Voltage
16V
Electronic Component
10000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

TDK C1005X6S1C105KT000E 产品概述

一、产品简介

TDK C1005X6S1C105KT000E 为贴片多层陶瓷电容(MLCC),标称容量 1 µF,公差 ±10%(C),额定电压 16 V,介质材料 X6S,封装为 0402(公制约 1.0 mm × 0.5 mm)。该型号属于高容值、小体积的通用去耦/滤波型电容,适用于对体积有严格限制的移动终端、消费电子与高密度电路板设计。

二、主要特性

  • 容值与精度:1 µF ±10%,适合常规去耦与电源旁路用途。
  • 额定电压:16 V,适合中低压电源轨。
  • 介质 X6S:工作温度范围宽(可覆盖低温至高温工况),兼顾较高的容值与温度特性,适用于需在-55°C 至 +125°C 区间运行的场合(具体温度性能及允许偏差请参见 TDK 规格书)。
  • 封装 0402:体积小、可实现高密度布板,但其容值在小封装下受工艺与偏置影响较明显。
  • 优点:体积小、ESL/ESR 低(相对其他封装)、适合高速去耦、可在自动贴装与回流工艺中可靠实现。

三、应用场景

  • 电源去耦与旁路(CPU、SoC、电源管理 IC)
  • 移动设备、便携式终端、相机和可穿戴设备等空间受限产品的滤波网络
  • DC-DC 转换器输入/输出滤波、模拟前端稳定与电磁兼容(EMC)补偿

四、设计与使用注意事项

  • 直流偏置效应:X6S 为高介电常数陶瓷,工作时随施加直流电压容量会出现下降,实际有效容值可能低于标称,设计时应考虑偏置影响并留有裕量。
  • 温度依赖:虽然 X6S 工作温度范围宽,但在极端温度点电容值会有规定的变化,关键电路请参考数据手册中的温度系数曲线。
  • 焊接与工艺:支持贴片回流焊,推荐按照 TDK 建议的焊接温度曲线与 PCB 焊盘尺寸,以减少热应力与开裂风险。0402 小型封装对机械应力敏感,避免在装配或测试过程中施加过大挤压力。
  • 老化与可靠性:陶瓷电容有老化现象(容量随时间缓慢下降),对长期性能有严格要求的场合需进行验证。

五、封装与布局建议

  • 0402(C1005)体积非常小,建议靠近被去耦的器件电源引脚放置以降低回路电感。
  • 保持最短的焊盘间连线与合适的焊盘尺寸,确保良好焊接质量与热流。
  • 对于高脉冲或高纹波场合,若发现容量或温漂不足,可考虑使用更大封装(如 0603/0805)或提高额定电压以减少偏置损失。

六、替代与选型建议

在需要更佳温度稳定性或低偏置损失时,可比较 X7R、C0G(NPO)等介质:X7R 在温度稳定性方面常优于 X6S,而 C0G 提供线性、极低损耗的电容特性但难以做到同等容值与体积。若电路对有效容量敏感,优先考虑封装尺寸放大或额定电压上备。

如需更详细的电气参数(直流偏置曲线、寿命试验、尺寸公差与回流曲线),建议查阅 TDK 官方规格书或联系供应商获取完整技术资料。

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