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TDK CGA4J3X7R1H225KT000N
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
16
specifications
Core information
- Product name
- TDK CGA4J3X7R1H225KT000N
- Type
- 0805
- Minimum package
- 2000
Technical parameters
- Electronic Component
- TDK
- Electronic Component
- CGA4J3X7R1H225KT000N
- Electronic Component
- 1
- Electronic Component
- 2.2uF
- Package
- 0805
- Electronic Component
- SMD Capacitor(MLCC)
- Electronic Component
- ±10%
- Electronic Component
- 0.042g
- Electronic Component
- 1
- Electronic Component
- BM0227542217
- Electronic Component
- X7R
- Voltage
- 50V
- Electronic Component
- 2000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
TDK CGA4J3X7R1H225KT000N 产品概述
一、基本参数与型号说明
TDK CGA4J3X7R1H225KT000N 为贴片多层陶瓷电容（MLCC），主要参数如下：额定电压 50 V，标称电容 2.2 µF，容差 ±10%，温度特性 X7R，封装 0805（常见尺寸约 2.0 mm × 1.25 mm）。该型号适合要求中等稳定性与较大容量密度的通用去耦与滤波应用。
二、X7R 介质与温度行为
X7R 为常用的高介电常数陶瓷体系，其温度特性规定在 –55 ℃ 至 +125 ℃ 范围内电容变化在 ±15% 以内。需要区分的是“温度系数（X7R）”与“额定精度（±10%）”：前者描述温度对电容的影响，后者为室温下的公差值。X7R 在温度范围内稳定性较好，适合多数工业和消费电子场景，但不是用于需要非常低温漂或高精度的场合。
三、直流偏置与频率特性
高介电常数材料在施加直流偏置时会产生显著的电容下降，2.2 µF/50 V 的 0805 MLCC 在接近额定电压时电容可能出现明显衰减，具体降幅与制造工艺相关，设计时应考虑 DC bias 影响并进行实测验证。频率响应方面，MLCC 在高频时表现良好，等效串联电感（ESL）和等效串联电阻（ESR）决定其高频滤波效果，常用于去耦与高频旁路。
四、封装与安装建议
0805 封装便于手工及自动贴装，安装时应注意：
- 焊接：兼容无铅回流工艺，推荐按 JEDEC/J-STD-020 等回流曲线进行焊接。
- 布局：靠近被去耦的电源引脚，走线最短，减小回流环路面积。
- 机械应力：避免焊盘过大或板弯曲引起的陶瓷裂纹，可在边缘留缝或使用柔性粘接剂缓冲。
- 并联：在需要更低 ESR/ESL 或更稳定电容的场合，可并联多个电容实现补偿。
五、典型应用场景
适用于电源旁路与去耦、DC-DC 降压/升压模块输入输出滤波、模拟电路旁路、数码消费类设备和工业控制电路的通用滤波元件。若用于汽车或航空等苛刻环境，应确认对应的额外认证（如 AEC-Q200）与可靠性数据。
六、可靠性与选型注意
选择时应注意实际工作电压下的有效电容（考虑 DC bias）、工作温度范围以及电路对 ESR/ESL 的要求。对抗振动、频繁温度循环或高机械应力的场合，需加以验证并考虑采用更大封装或不同介质。最终设计建议参考 TDK 官方数据手册，获取详尽的电容-电压曲线、温度特性、包装与焊接规范，以确保性能与可靠性满足项目需要。
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