WMSIC Electronic Components

TDK MLG1005S2N0CT000

ModelMLG1005S2N0CT000
Package0402
BrandTDK
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
TDK MLG1005S2N0CT000
Type
TDK
Unit
Electronic Component
Minimum package
10000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
TDK
Electronic Component
MLG1005S2N0CT000
Electronic Component
1
Package
0402
Type
Inductor
Electronic Component
SMD Inductor
Electronic Component
0.012g
Inductor
2nH
Electronic Component
1
Factor
7@100MHz
Electronic Component
BM0058431624
Current
900mA
Frequency
7.5GHz
Resistor(DCR)
70mΩ

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MLG1005S2N0CT000 — 产品概述

一、基本参数

  • 型号:MLG1005S2N0CT000(TDK)
  • 类型:叠层片式电感(0402 / 1005 公制封装)
  • 电感值:2 nH
  • 额定直流电流:900 mA
  • 直流电阻 (DCR):70 mΩ
  • 品质因数 (Q):7 @ 100 MHz
  • 自谐振频率 (SRF):7.5 GHz
  • 封装尺寸:0402(典型为 1.0 mm × 0.5 mm)

二、产品特性与电气行为

MLG1005S2N0CT000 属于微型叠层高频电感,具有小电感值和高自谐振频率的特点,适合 GHz 级别电路中的射频匹配与偏置网络。Q 值在 100 MHz 为 7,表明在中低频到高频范围内存在一定损耗,适用于抑制共模/差模噪声、射频阻抗匹配与偏置馈入(bias-tee)等场景。SRF ≈ 7.5 GHz,说明在该频率以上电感元件的等效阻抗将转为容性,设计时应避免把工作点推至或高于 SRF。

直流时的功耗可用 P = I^2·R 估算:在额定 0.9 A 下,P ≈ 0.9^2 × 0.07 ≈ 0.057 W(约 57 mW),长期工作时需考虑 PCB 热阻与散热,必要时应进行电流降额以保证可靠性。

三、典型应用场景

  • 射频电路中的阻抗匹配和谐振网络(手机、Wi‑Fi、蓝牙等前端电路的微调)
  • 高频偏置电路(为放大器、RF 前端提供直流偏置同时隔离射频)
  • 高频滤波与去耦(与电容配合构成谐振或阻抗转换)
  • EMI 抑制与射频隔离(用于信号链路或供电线上,抑制高频干扰)

四、布局与焊接建议

  • 推荐遵循 TDK 官方陆图(land pattern)和回流焊曲线;0402 封装尺寸非常小,焊膏量宜控制,过多会造成元件浮起或焊接不良。
  • 布局上尽量靠近需隔离或偏置的器件,减少引线长度以降低寄生电感与串扰。
  • 对于高电流应用,保证与大铜箔相连的焊盘足够散热通道;若需更高电流裕度,应选择更大封装或低 DCR 型号。
  • 封装脆弱,贴装时避免过大机械应力,焊接完成后避免在元件区强烈弯曲 PCB。

五、可靠性与测试要点

  • 常规测试项目:直流电阻、标称电感值与频率响应(阻抗/相角/插入损耗)、外观与焊接强度测试、温升测试。
  • 热稳定性与温漂:小封装电感在连续大电流下会产生显著温升,应做热循环与热冲击测试以验证焊点与材料可靠性。
  • 在射频应用中,建议测量器件的 S 参数或阻抗谱以确认在目标频段的实际行为(尤其接近 SRF 时)。

六、选型与设计注意事项

  • 若目标电路工作频率接近或超过 7.5 GHz,应改用 SRF 更高或专为微波设计的电感,避免出现容性行为导致失效。
  • 对于对损耗敏感的射频放大器通路,应考虑 Q 值更高的器件;本型号 Q=7 适合通用射频与偏置场合,但不适合要求极低损耗的高性能滤波器。
  • 额定电流与 DCR 共同决定功耗与温升,若应用长期接近 900 mA,建议按 60–80% 的降额策略或改用低 DCR 封装以延长寿命。

总结:MLG1005S2N0CT000 为一款体积极小、适用高频工作的叠层片式电感,适合移动终端与射频偏置、匹配与去耦等场合。设计中应注意 SRF、Q 值与热管理,严格按照制造商的贴装与回流规范进行装配与验证。

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