WMSIC Electronic Components

TECH PUBLIC TPD1E04U04DPLR-TP TPD1E04U04DPLR

ModelTPD1E04U04DPLR-TP
PackageDFN0603-2
BrandTECH PUBLIC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
TECH PUBLIC TPD1E04U04DPLR-TP
Type
TECH PUBLIC
Minimum package
15000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
TECH PUBLIC
Electronic Component
TPD1E04U04DPLR-TP
Electronic Component
1
Package
DFN0603-2
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.009g
Electronic Component
1
Cj- Capacitor
0.4pF
Electronic Component
BM0230689282
Operating Temperature
40℃~+125℃
Voltage
11V
Electronic Component
IEC 61000-4-4;IEC 61000-4-5;IEC 61000-4-2
Current(Ir)
50nA
Voltage(VBR)
6.5V
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

TPD1E04U04DPLR-TP 产品概述

一、产品简介

TPD1E04U04DPLR-TP(品牌:TECH PUBLIC / 台舟电子)是一款用于低电压高速信号线的瞬态抑制器件,封装为 DFN0603-2。器件针对静电放电(ESD)、瞬态脉冲和浪涌干扰提供保护,适合空间受限且对信号完整性要求高的电子产品中使用。产品在标准环境下未分类(描述:未分类),需结合具体应用选型。

二、主要电气参数

  • 反向截止电压 (Vrwm):3.6 V,适用于 3.3 V 及更低电压系统的保护。
  • 击穿电压 (Vbr):6.5 V。
  • 钳位电压 (Vclamp):11 V(Ipp = 3 A,8/20 μs 波形)。
  • 峰值脉冲电流 (Ipp):3 A(8/20 μs)。
  • 反向漏电流 (Ir):50 nA,适合对漏电敏感的低功耗设计。
  • 结电容 (Cj):0.4 pF,极小电容有利于保持高速信号完整性。
  • 工作温度范围:-40 ℃ ~ +125 ℃。
  • 符合防护等级:IEC 61000-4-2(ESD)、IEC 61000-4-4(EFT)、IEC 61000-4-5(浪涌)。

三、主要特点与优势

  • 低钳位电压:在大电流冲击下仍能提供有效钳位,减小被保护器件应力。
  • 超低结电容(0.4 pF):对高速信号影响小,适合 USB、HDMI、SATA 等接口保护。
  • 小型封装 DFN0603-2:节省板面空间,便于自动贴装。
  • 宽工作温度与低漏电:适用于工业与消费类产品的长期可靠运行。
  • 满足 IEC ESD/EFT/Surge 标准:便于通过整机抗干扰认证。

四、典型应用场景

  • 移动终端、可穿戴设备和物联网节点的接口保护(USB、UART、I2C 等)。
  • 高速差分/单端信号线的ESD与浪涌防护场合。
  • 工业控制、通讯设备和车载电子中对传输线和电源线的瞬态抑制。
  • 需要低漏电且高可靠性的低功耗模块保护。

五、封装与布板建议

  • 将器件靠近受保护的连接器或接口引脚放置,以缩短感应路径并提高保护效率。
  • 信号线至器件的走线应尽量短且成直线,避免环路与长条铜皮引入寄生电感。
  • 建议在地线处设置低阻抗回流路径并使用足够的过孔(via)连接地层,以利热量泄散与冲击电流回流。
  • 对于多通道系统,考虑在每通道均布保护器件或选用多路保护方案。

六、选型与使用注意

  • Vrwm(3.6 V)需高于系统正常工作电压,以避免工作状态下误导通;适合 3.3 V 系统保护,但不适合更高电压系统。
  • 钳位电压会随脉冲电流与工作温度变化,设计时应留有裕量以保护下游元器件。
  • 当防护对象需要反向或双向保护时,请确认器件极性或选用相应双向型号。
  • 复杂或严苛的浪涌场景(高能量重复冲击)应配合其他防护元件(如熔断器、阻尼、电感)共同设计。

欲获取完整电气特性曲线、包尺寸和应用电路,请参考厂商资料或联系 TECH PUBLIC(台舟)获取详细数据手册。

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