WMSIC Electronic Components

TECH PUBLIC ESD9X5VU

ModelESD9X5VU
PackageX1-DFN1006-2
BrandTECH PUBLIC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
TECH PUBLIC ESD9X5VU
Type
TECH PUBLIC
Minimum package
10000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
TECH PUBLIC
Electronic Component
ESD9X5VU
Electronic Component
1
Package
X1-DFN1006-2
Electronic Component
Electronic Component
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.01g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
0.5pF
Electronic Component
BM0225773306
Operating Temperature
55℃~+125℃
Voltage
10V;13V
Electronic Component
IEC 61000-4-2;IEC 61000-4-5

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

ESD9X5VU — 静电与浪涌保护二极管(TVS/ESD)产品概述

一、产品简介

ESD9X5VU 是 TECH PUBLIC(台舟电子)推出的一款单通道、单向 TVS/ESD 晶片,用于对敏感信号线进行静电放电和浪涌(Surge)保护。器件采用小型 X1-DFN1006-2 封装,适合空间受限的便携和消费电子产品。工作温度范围宽(-55℃ 至 +125℃),针对 IEC 61000-4-2(ESD)与 IEC 61000-4-5(浪涌)要求进行了设计与验证,能够在有限的封装体积内提供可靠的瞬态过压钳位。

二、主要电气参数(概要)

  • 钳位电压(Vc):10V(低钳位版)/ 13V(高钳位版)
  • 反向截止电压 Vrwm:5V
  • 击穿电压(Vbr):7.5V
  • 峰值脉冲功率 Ppp:70W @ 8/20μs
  • 峰值脉冲电流 Ipp:4A @ 8/20μs
  • 结电容 Cj:0.5 pF(低容值,适配高速信号)
  • 反向漏电流 Ir:80 nA
  • 通道数:单路;极性:单向
  • 工作温度:-55℃ ~ +125℃
  • 封装:X1-DFN1006-2(超小贴片封装)
  • 类型:ESD / TVS(瞬态抑制)

三、产品特性与优势

  • 低钳位/高钳位可选:根据系统电压容许范围选择 10V 或 13V 钳位版本,灵活适配不同保护需求。
  • 高瞬态承受能力:70W@8/20μs 的峰值功率和 4A 峰值脉冲电流,能有效吸收常见的静电及短时浪涌能量。
  • 极低结电容(0.5 pF):对高速信号(如 USB、串行接口、数字音频等)影响最小,保证信号完整性。
  • 单向保护:适用于对信号线向地的单向瞬态钳位,推荐用于需要方向性保护的接口。
  • 小封装、高集成:X1-DFN1006-2 占板面积小,适合紧凑型电路板设计和表面贴装工艺。

四、典型应用场景

  • USB(尤其 USB2.0)接口、串行数据线保护(UART、I2C、SPI)
  • 移动设备与便携终端的外部接口防护
  • 工业控制端口、测量仪器输入保护(对抗现场静电放电和浪涌)
  • 通讯模块、传感器接口及其他对低容性要求高的高速信号线

五、布板与使用建议

  • 尽量将器件放置于被保护接口的靠近端子侧,保护点与接地平面之间走线应尽可能短,降低环路感应。
  • 对于高速差分信号,选择低容差版本并注意差分匹配,避免串扰和带宽损失。
  • 不应将 TVS 当作连续电流导体使用;在波形能量超过规定(70W@8/20μs 或 4A 峰值)时器件可能损坏。
  • 焊接与回流:遵循封装所支持的回流焊温度曲线,避免过热导致封装应力或性能退化。
  • 设计时留意系统工作电压与 Vrwm(5V)匹配,确保在正常工作下器件处于截止/非导通状态。

六、选型与验证要点

  • 若被保护线路工作在 5V 体系(如 USB),优先考虑 Vrwm=5V 的 ESD9X5VU;根据允许的瞬态峰值电压选择 10V 或 13V 钳位版本。
  • 在系统级做 ESD/浪涌仿真或实测(IEC 61000-4-2 / IEC 61000-4-5)验证,以确认布局与接地策略满足整机抗扰度。
  • 注意环境温度对漏电流与击穿特性的影响,在极端温度下验证 Ir 与钳位稳定性。

如需进一步的封装尺寸图、典型钳位曲线、推荐 PCB 封装(footprint)或样片测试数据,可提供具体需求以便获取相应技术资料与工程支持。

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