WMSIC Electronic Components

TECH PUBLIC PESD5V0F1BL

ModelPESD5V0F1BL
PackageDFN1006-2
BrandTECH PUBLIC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
TECH PUBLIC PESD5V0F1BL
Type
TECH PUBLIC
Minimum package
10000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
TECH PUBLIC
Electronic Component
PESD5V0F1BL
Electronic Component
1
Package
DFN1006-2
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.009g
Electronic Component
1
Cj- Capacitor
0.6pF
Electronic Component
BM0227271654
Operating Temperature
55℃~+125℃
Voltage
15V
Electronic Component
IEC 61000-4-5;IEC 61000-4-2
Current(Ir)
80nA
Voltage(VBR)
9V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

PESD5V0F1BL 产品概述

一、产品简介

PESD5V0F1BL 是 TECH PUBLIC(台舟电子)出品的一款高可靠性 ESD 二极管,封装为微型 DFN1006-2,专为对抗静电放电(ESD)和工业级浪涌(Surge)而设计。器件在设计上兼顾低结电容与低漏电,使其既适用于高速数据线的干扰抑制,也能在电源与信号线上提供有效保护。

二、主要特性

  • 钳位电压(Vclamp):约 15 V(在规定冲击条件下);能在瞬态事件中限制过电压,保护下游器件。
  • 反向截止电压 Vrwm:5 V,适配 5V 总线与接口(如 USB、外部供电信号线等)。
  • 击穿电压(Vbr):9 V,标志器件进入钳位状态的阈值。
  • 结电容(Cj):0.6 pF,极低的寄生电容对高速信号干扰小,适合高速接口保护。
  • 反向电流(Ir):80 nA(在 Vrwm 条件下),对高阻抗电路影响小。
  • 工作温度范围:-55 ℃ 至 +125 ℃,适合工业级和严苛环境应用。
  • 防护等级:满足 IEC 61000-4-2(ESD)与 IEC 61000-4-5(浪涌)测试要求(按器件规格与测试条件)。

三、典型应用场景

  • USB、UART、I2C、SPI 等 5V 或低压高速数据接口的端口保护。
  • 智能终端、工业控制器、传感器接口与摄像头接口等需要低电容保护的高速通道。
  • 电源输入与信号线的浪涌与瞬态抑制,保护后端敏感器件与芯片。
  • 严苛环境下的产品(工业、汽车电子非车规级),要求宽温度稳定性的场合。

四、封装与布局建议

  • 封装:DFN1006-2,体积小、热阻低,适合集成在空间受限的 PCB 区域。
  • PCB 布局建议:将二极管尽量靠近受保护引脚布置,使用尽可能短的走线连接至受保护节点;地线应采用低阻抗回流路径,必要时在保护器件下方或附近放置多点接地孔以减小回路感抗。
  • 对于高速差分线,建议在两条线各自放置保护单元或使用适配的差分保护配置,避免影响信号完整性。

五、使用注意事项

  • 钳位电压 15V 为典型值,实际钳位性能与冲击电流大小、脉冲波形及 PCB 布局有关,设计时应结合系统软硬件保护策略(如限流电阻、保险丝等)共同实现可靠防护。
  • 反向漏电 80 nA 仅在 Vrwm 条件下典型测试获取,若系统对静态漏电极为敏感,应在实际工作电压和温度下验证。
  • 工作温度范围宽,但长时间高温环境会影响器件寿命,建议在长期高温场合做加速老化验证。

六、总结与选型建议

PESD5V0F1BL 以其低结电容(0.6 pF)、低漏电(80 nA)与 5V 反向耐压匹配,为 5V 总线和高速信号线提供了兼顾性能与封装尺寸的保护方案。对于需要在有限空间内实现抗 ESD 与浪涌能力且不希望牺牲信号完整性的产品,PESD5V0F1BL 是一款值得优先考虑的保护器件。选型时请结合系统的最大冲击电流、PCB 布局和最终的认证需求进行完整验证。

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