WMSIC Electronic Components

TECH PUBLIC WPM2015-3/TR WPM2015

ModelWPM2015-3/TR
PackageSOT-23
BrandTECH PUBLIC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
TECH PUBLIC WPM2015-3 / TR
Type
TECH PUBLIC
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
TECH PUBLIC
Electronic Component
WPM2015-3/TR
Electronic Component
1
Package
SOT-23
Electronic Component
1 P
Electronic Component
MOSFET
Electronic Component
0.031g
Electronic Component
1
Electronic Component
BM0264777486
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
1.25W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
20V
Capacitor(Ciss)
1.16nF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

WPM2015-3/TR — P沟道 MOSFET 产品概述

一、概述

WPM2015-3/TR 是台舟电子(TECH PUBLIC)推出的一款 P 沟道功率 MOSFET,采用 SOT-23 表面贴装封装并通过无铅认证。器件面向低压系统的高侧开关与 PWM 驱动场景,兼顾较高电流能力与小封装占板面积的要求,适合便携式与消费电子产品的负载切换与保护电路。

二、主要电气参数

  • 漏源耐压 Vdss:20 V
  • 连续漏极电流 Id:2.8 A
  • 导通电阻 RDS(on):80 mΩ @ Vgs = 2.5 V
  • 阈值电压 Vgs(th):0.45 V
  • 总栅极电荷 Qg:9.6 nC @ 4.5 V
  • 输入电容 Ciss:1.16 nF;反向传输电容 Crss:125 pF;输出电容 Coss:210 pF
  • 功率耗散 Pd:1.25 W
  • 工作温度范围:-55 ℃ ~ +150 ℃

三、主要特性与优势

  • 低导通电阻(80 mΩ @2.5V)在低压下可实现较小的导通损耗,适合电池供电与 3.3V/5V 系统;
  • 逻辑电平驱动特性(2.5V 驱动即可获得较好导通),便于 MCU 直接控制;
  • 中等栅极电荷(9.6 nC)在开关频率不极高的 PWM 中能平衡开关损耗与驱动功率;
  • SOT-23 小封装利于高度集成与自动贴装生产;无铅认证满足环保要求。

四、应用场景与推荐电路要点

  • 典型应用:PWM 调光、直流负载高侧开关、反接保护、供电域切换;
  • 驱动建议:作为 P 沟高侧开关时,注意 Vgs 极性(栅极需被拉低以打开);建议在栅极并联 10k ~ 100k 的上/下拉电阻以保证上电/掉电状态确定;对于快速切换,可并联小阻尼或 RC 以抑制振铃并控制 dv/dt;
  • 热与散热:在高电流条件下建议在 PCB 上增加散热铜箔并靠近焊盘布线,避免长期超过额定 Pd。

五、封装、可靠性与热设计建议

SOT-23 小尺寸便于紧凑布局,但热阻较大,器件 Pd 仅 1.25 W(无额外散热条件)。在实际设计中应:

  • 采用足够的 PCB 铜面积与过孔导热至内层/底层;
  • 在连续高载流或脉冲大电流场景下进行热仿真与功耗评估并留足降额裕量。

六、选型与注意事项

  • 若系统工作电压接近或超过 20 V,应选用更高 Vdss 的器件;
  • 高频大电流 PWM 场景需关注 Qg 与 Ciss 带来的驱动损耗与开关损耗;
  • 使用前请参照厂家完整器件数据手册,核对最大 Vgs、浪涌能力及封装焊接规范。
    订购请使用型号 WPM2015-3/TR(带带卷包装),并根据实际应用确认封装与批次。

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