WMSIC Electronic Components

TECH PUBLIC TPD4EUSB30DQAR-TP TPD4EUSB30DQAR

ModelTPD4EUSB30DQAR-TP
PackageDFN2510-10
BrandTECH PUBLIC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
TECH PUBLIC TPD4EUSB30DQAR-TP
Type
TECH PUBLIC
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
TECH PUBLIC
Electronic Component
TPD4EUSB30DQAR-TP
Electronic Component
1
Package
DFN2510-10
Electronic Component
Electronic Component
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.052g
Electronic Component
1
Channel Count
Electronic Component
Cj- Capacitor
0.3pF
Electronic Component
BM0226539280
Operating Temperature
55℃~+125℃
Voltage
25V
Electronic Component
IEC 61000-4-4;IEC 61000-4-5;IEC 61000-4-2
Current(Ir)
400nA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

TPD4EUSB30DQAR-TP 产品概述

一、产品简介

TPD4EUSB30DQAR-TP 是 TECH PUBLIC(台舟电子)提供的一款四路单向瞬态电压抑制/静电放电保护器(TVS/ESD),封装为 DFN2510-10。器件面向 USB 及其他低电压高速信号线的静电与浪涌保护需求,工作温度范围宽(-55℃ ~ +125℃),适用于工业级和消费类产品的环境。

二、主要特性

  • 钳位电压:25 V(典型钳位能力,针对冲击电流时限值)
  • 反向耐压(Vrwm):5 V,适配 5 V 总线系统
  • 击穿电压(Vbr):8 V
  • 峰值脉冲功率:100 W @ 8/20 μs(单脉冲峰值能量吸收能力)
  • 峰值脉冲电流(Ipp):4 A @ 8/20 μs
  • 结电容(Cj):0.3 pF(超低寄生电容,利于高速信号完整性)
  • 反向电流(Ir):400 nA(低漏电流,有利于低功耗系统)
  • 极性:单向,四通道独立保护
  • 防护级别:满足 IEC 61000-4-2 / 4-4 / 4-5(ESD、EFT、浪涌)标准
  • 封装:DFN2510-10,小尺寸便于紧凑布局

三、典型应用

  • USB 数据口(尤其对高速数据线要求低电容的保护)
  • 智能手机、平板、笔记本等便携设备的外部接口保护
  • 工业控制、测量与通信设备的信号端口防护
  • 其他对 ESD、EFT 与浪涌有要求的高速差分或单端信号线

四、设计与布局建议

  • 将器件尽量靠近外部连接器放置,以缩短走线并提高保护效率;保护端接地旁应设置多条过孔低阻连接至公共地。
  • 由于为单向器件,注意方向性,确保对地钳位路径正确。
  • 极低的结电容(0.3 pF)有利于信号完整性,但在需要严格阻抗控制的差分链路上仍建议配合匹配电阻和良好走线。
  • 在高能脉冲环境下,确保 PCB 地平面与返回路径的连续性以避免地弹引起的二次干扰。

五、可靠性与封装信息

  • 工作温度:-55℃ ~ +125℃,适应宽温度范围应用。
  • 小型 DFN2510-10 封装,适合自动贴装与回流焊工艺,便于批量生产与成本控制。
  • 推荐在样机阶段进行系统级 ESD/浪涌验证,确认在目标应用下的实际钳位与传导路径表现。

总结:TPD4EUSB30DQAR-TP 以其四路单向保护、超低结电容、工业级温度与符合 IEC 防护标准的能力,适合需要兼顾高速信号完整性与可靠防护的接口电路。

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