WMSIC Electronic Components

TECH PUBLIC 2N7002T

TECH PUBLIC 2N7002T
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Product image

Model2N7002T
PackageSOT-523-3
BrandTECH PUBLIC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

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Technical data

Product details

19 specifications

Core information

Product name
TECH PUBLIC 2N7002T
Type
TECH PUBLIC
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
TECH PUBLIC
Electronic Component
2N7002T
Electronic Component
1
Package
SOT-523-3
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.023g
Electronic Component
1
Electronic Component
BM0264777477
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
350mW
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
60V
Capacitor(Ciss)
27pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

2N7002T产品概述

概述

2N7002T是一款高性能的N沟道MOSFET，专门设计用于低功耗开关和放大应用。凭借其优异的电气特性和广泛的工作环境适应能力，它已成为电子工程师和设计师的热门选择，适合用于各种消费电子、工业控制和汽车电子等领域。该器件具有最大额定功率350mW，漏源电压达到60V，能够提供理想的电流承载能力（连续漏极电流300mA），使其在多种应用中表现出色。

主要特性

  1. 功率和电流承载能力：

    • 功率（Pd）：²N7002T的功率额定值为350mW，适合低功耗应用，可有效控制热量生成，提高系统的效率。
    • 连续漏极电流（Id）：其最大连续漏极电流为300mA，使其能够适应多种负载，在不少电机驱动和信号开关场合能够胜任。

  2. 电压特性：

    • 漏源电压（Vdss）：最高可工作电压为60V，适合多种电压应用，尤其在对电压稳定性有高要求的场合下表现优异。

  3. 导通电阻：

    • 导通电阻（RDS(on)）：在4.5V栅极驱动下，导通电阻为2.5Ω。这一低阻值有助于减少能量损耗，提高电源效率，并提升整体电路性能。

  4. 阈值电压：

    • 阈值电压（Vgs(th)）：1.6V（在Id=250μA下），这一相对较低的阈值电压在实现高效开关控制时提供了很好的灵活性。

  5. 电容特性：

    • 该MOSFET的输入电容（Ciss）为27pF，反向传输电容（Crss）为2pF，较低的电容值使得开关速度较快，适合高频应用。

  6. 栅极电荷：

    • 栅极电荷（Qg）：在10V下，栅极电荷为3nC，这一特性有助于降低驱动电路的功耗，并提高系统的响应速度。

工作环境与封装

2N7002T的工作温度范围广泛，低至-55℃至高达+150℃，这保证了其在极端环境下的稳定性及可靠性。该器件采用SOT-523-3封装，体积小，适合现代紧凑型电子产品设计。

应用场景

由于其卓越的电气性能，2N7002T在多个应用场景中表现出色，包括但不限于：

  • 消费电子：如手机、平板电脑、家用电器中电源管理，以及控制开关电路。
  • 工业控制：用于开关电源和信号调理等场所。
  • 汽车电子：在汽车的控制模块、传感器开关等领域中，确保高稳定性和可靠性。

总结

综上所述，2N7002T凭借其高性能参数、适应广泛应用的能力和稳固的工作环境，非常适合作为N沟道MOSFET的一个理想选项。无论是在高频开关应用还是在低功耗设计中，2N7002T都能实现卓越的表现，展示出其在现代电子产品设计中的重要性和可靠性。设计师们可以依靠其特性实现高效、稳定且经济的电子电路解决方案。

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