WMSIC Electronic Components

TECH PUBLIC TPD4S010DQAR

ModelTPD4S010DQAR
PackageDFN2510-10
BrandTECH PUBLIC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
TECH PUBLIC TPD4S010DQAR
Type
TECH PUBLIC
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
TECH PUBLIC
Electronic Component
TPD4S010DQAR
Electronic Component
1
Package
DFN2510-10
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.034g
Electronic Component
1
Cj- Capacitor
0.35pF
Electronic Component
BM0231019638
Voltage
15V
Electronic Component
IEC 61000-4-4;IEC 61000-4-5;IEC 61000-4-2
Current(Ir)
80nA
Voltage(VBR)
9.5V
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

TPD4S010DQAR-TP 产品概述

一、产品简介

TPD4S010DQAR-TP 是一款面向高速接口的四路ESD保护器件,由 TECH PUBLIC(台舟电子)提供。该器件为低电容、低泄漏的瞬态浪涌与静电放电保护元件,适用于对信号完整性要求较高的移动通信、USB、HDMI、LVDS、CSI/DSI 等差分或单端高速数据线保护场合。

二、核心电气参数

  • 钳位电压 (Vc):15 V(典型最大钳位,保护时限内有效)
  • 击穿电压 (Vbr):9.5 V
  • 反向截止电压 (Vrwm):5 V(工作耐压)
  • 峰值脉冲电流 (Ipp):4.3 A @ 8/20 μs
  • 结电容 (Cj):0.35 pF(每通道,低电容适合高速信号)
  • 反向电流 (Ir):80 nA(在 Vrwm 下的典型泄漏)
  • 防护等级:符合 IEC 61000-4-2(ESD)、IEC 61000-4-4(EFT)、IEC 61000-4-5(浪涌)测试规范
  • 类型:ESD 保护器件

三、主要特性

  • 低电容(约 0.35 pF),对高速信号影响小,能保持信号完整性与时序准确性。
  • 支持 8/20 μs 浪涌电流 4.3 A,能承受工业级冲击与浪涌事件。
  • 低反向漏电(约 80 nA),适合电池供电或低功耗系统。
  • 工作电压 Vrwm = 5 V,适用于 5 V/3.3 V 逻辑域保护。
  • 小封装 DFN2510-10,占板面积小,便于高密度布局。

四、典型应用场景

  • 手机、平板等移动终端的接口保护(USB、音频、摄像头接口)。
  • 摄像头(CSI)、显示(DSI/HDMI)等高速差分信号保护。
  • 工业设备与仪表的外部连接口防护(满足 IEC 61000 系列规范)。
  • 高速通信模块、射频前端接口的静电与浪涌保护。

五、封装与 PCB 布局建议

  • 封装:DFN2510-10,适合表面贴装与自动化组装。
  • 布局建议:将器件尽可能靠近受保护的接口或连接器放置,保护路径短且直,减少寄生电感和寄生电阻;保护地(GND)应通过低阻抗回流路径连接到系统地,并在器件附近设置多颗地 vias 以改善瞬态散热与回流;对差分线保持对称走线,避免在保护器附近做急转弯或长走线。
  • 对高速信号可在信号线上串联小阻(阻抗匹配需要评估)以抑制反射并配合保护器工作。

六、使用注意事项

  • 确认 Vrwm(5 V)高于系统信号的正常偏置电压,避免误触发。
  • 对于更高能量的浪涌或苛刻环境,可考虑并联更高功率的浪涌抑制元件或在输入端增加系列阻抗。
  • 焊接工艺(回流曲线)应符合封装说明,避免过热导致器件参数漂移。

七、采购与兼容性提示

TPD4S010DQAR-TP 在功能上等同于市面上低电容四路保护器件,选型时应核对 Vrwm、Cj、Ipp 以及封装管脚定义以保证与系统匹配。TECH PUBLIC(台舟电子)提供的版本适合需要小体积高性能静电与浪涌保护的终端产品。若需完整的数据手册、波形图或参考设计,建议向供货商索取原始规格书以获得更详细的测试条件与典型性能曲线。

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