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TECH PUBLIC SI2302
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- TECH PUBLIC SI2302
- Type
- TECH PUBLIC
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- TECH PUBLIC
- Electronic Component
- SI2302
- Electronic Component
- 1
- Package
- SOT-23-3
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.033g
- Electronic Component
- 1
- Electronic Component
- BM0219918795
- Operating Temperature
- 40℃~+150℃
- Power Dissipation(Pd)
- 900mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SI2302 产品概述
产品名称：SI2302
产品类型：N沟道场效应管 (MOSFET)
品牌：TECH PUBLIC (台舟电子)
封装类型：SOT-23-3
额定功率：900 mW
额定电压：20 V
额定电流：2.6 A
一、概述
SI2302 是一款高性能的 N沟道 MOSFET，采用 SOT-23-3 封装，广泛应用于各种电子设备中，特别是在需要高效能和小型化的场合。该器件充分利用了 MOSFET 的电压控制特性，使其在开关电路、电源管理以及线性调节等领域表现出色。
二、技术参数与特性
最大额定值：
- 漏极源极电压（V_DS）：20V。SI2302 能够承受的最大漏极-源极电压为20V，使其适用于大部分低电压应用。
- 连续漏极电流（I_D）：2.6A。在不超过该电流值的情况下，SI2302 能够稳定运行，适合大多数电源和驱动电路。
- 消耗功率（P_D）：900 mW。该功率范围内可以保持较低的温升，有利于延长使用寿命。
电气特性：
- 导通电阻（R_DS(on)）：在特定栅极电压下，SI2302 的导通电阻极低，有助于提高转换效率和降低功耗。
- 开关速度快：其快速开关特性在 PWM 调制和开关电源应用中表现尤为出色，能够显著提高系统的工作效率。
热特性：
- SI2302 的封装设计考虑到了散热性能，在适当的散热条件下，确保器件在较高功耗情况下依然能保持稳定运行。
三、应用领域
SI2302 被广泛应用于各类电子设备和系统，主要包括但不限于：
- 电源管理系统：可用于 DC-DC 转换器、开关电源等，以实现高效的电源转换和控制。
- 驱动电路：适用于马达驱动、电池管理系统等，特别是在低电压、大电流的应用场景中。
- 消费电子：在平板、手机、电脑等消费电子产品中，SI2302 用作电源开关和其他信号开关。
四、优势和选择理由
选择 SI2302 的理由如下：
- 高效能：由于其低导通电阻，SI2302 在进行高频开关操作时可以确保更少的热量产生。
- 小封装、多功能：SOT-23-3 封装设计使得 SI2302 在空间有限的应用中成为理想选择，能够有效节省PCB空间。
- 易于集成：与其他组件（如电源控制IC或微控制器）易于兼容，简化了电路设计过程。
- 可靠性高：台舟电子作为知名品牌，提供高质量的产品，确保其在不同环境下的可靠性和稳定性。
五、总结
SI2302 是一款小型化、性能优越的 N沟道 MOSFET，适合用于电源管理、驱动控制等多个领域。凭借其优秀的电气特性和可靠的性能，使其成为设计工程师在电路设计中广泛青睐的元器件。无论是在高效电源转换还是在快速信号开关的应用场合，SI2302 都能展现出卓越的表现，同时进一步推动现代电子设备的小型化和高效能发展。
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