WMSIC Electronic Components

TECH PUBLIC FDN338P

ModelFDN338P
PackageSOT-23
BrandTECH PUBLIC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
TECH PUBLIC FDN338P
Type
TECH PUBLIC
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
TECH PUBLIC
Electronic Component
FDN338P
Electronic Component
1
Package
SOT-23
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
0.03g
Electronic Component
1
Electronic Component
BM0220136685
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
1.1W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
20V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

FDN338P 产品概述

1. 产品基本信息

FDN338P是由TECH PUBLIC(台舟电子)生产的一款N沟道增强型场效应管(MOSFET),采用SOT-23封装。该器件凭借其优异的电气特性与小型化封装,广泛应用于各种低功耗电子设备中。

2. 封装与尺寸

FDN338P采用SOT-23封装,这是一种小型表面贴装封装,常用于消费者电子和便携式设备中。SOT-23的优势在于其占用空间小,有利于电路的紧凑设计和整体布局优化。该封装通常具有三个引脚,适合自动化贴装,能够降低组装成本并提高生产效率。

3. 关键参数

FDN338P具有许多突出的电气特性,具体包括:

  • 最大漏极源极电压(V_DS):FDN338P的最大漏极源极电压可达30V,适合于中低电压应用。

  • 最大漏极电流(I_D):在室温条件下,FDN338P的最大漏极电流为1.5A。这个参数使其适合作为开关元件,通过控制漏极电流来驱动负载。

  • 栅源阈值电压(V_GS(th)):FDN338P的栅源阈值电压范围通常在0.8V到2.0V之间,这表明其在较低栅电压下即能进入导通状态,非常适合与微控制器(MCU)或其他低电压控制电路配合使用。

  • R_DS(on):在V_GS为10V的条件下,FDN338P的导通阻抗(R_DS(on))小于0.05Ω,确保在导通状态下能够提供高效的电流传输和低功耗的特性。

4. 应用领域

FDN338P广泛应用于以下领域:

  • 开关电源:在开关电源中用作开关元件,以实现高效率的能量转换和管理。

  • 电池管理系统(BMS):作为电流控制元件,实现对电池组的保护和监测功能,保证电池的安全性和性能。

  • LED驱动:在LED照明系统中,FDN338P能够高效控制LED灯的开启和关闭,有助于降低能耗。

  • 电机驱动:在小型电机驱动电路中,FDN338P可用作开关,控制电机的启停及转速。

  • 便携产品:例如智能手机、平板和其他便携式设备中,FDN338P由于其低功耗特性,非常适用于电源管理和信号开关应用。

5. 性能优势

FDN338P在多个方面具备显著的性能优势:

  • 小型化设计:由于采用SOT-23封装,FDN338P适合需要小型化、高集成度的现代电子产品。
  • 高效能:凭借低导通电阻和低栅源阈值电压,FDN338P能够在较低的电压下高效工作,降低整体功耗。
  • 易于驱动:适合与低压系统对接的设计,使其在自动化照明、嵌入式系统等领域具有良好的兼容性。

6. 结论

FDN338P是TECH PUBLIC(台舟电子)推出的一款高性能N沟道MOSFET,凭借其小型化的SOT-23封装、出色的电气特性和广泛的应用能力,成为现代电子设计中不可或缺的重要元件。无论是在消费者电子、工业控制还是高科技产品中,FDN338P凭借其优良的性能确保了设计的灵活性和高效性,助力电子产品向更轻薄、智能的方向发展。

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