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TECH PUBLIC AON7403
Configuration
1 options
Configuration
24+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- TECH PUBLIC AON7403
- Type
- TECH PUBLIC
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- TECH PUBLIC
- Electronic Component
- AON7403
- Electronic Component
- 1
- Package
- SOT-23-5
- Electronic Component
- 1 P
- Electronic Component
- MOSFET
- Electronic Component
- 0.16g
- Electronic Component
- 1
- Electronic Component
- BM0225773409
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 38W
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage(Vdss)
- 30V
- Capacitor(Ciss)
- 3.448nF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
AON7403 产品概述
一、产品简介
AON7403 是 TECH PUBLIC（台舟电子）推出的一款低电阻 N 沟增强型场效应管（MOSFET），封装为 SOT-23-5，适用于空间受限但对导通损耗和开关性能有较高要求的中低压电源与功率开关场景。器件额定耐压 30V，连续漏极电流高达 50A，在汽车级与工业级温度范围内均能稳定工作（-55℃ 至 +150℃）。
二、关键电气参数
- 漏源耐压（Vdss）：30V
- 连续漏极电流（Id）：50A
- 导通电阻（RDS(on)）：8mΩ @ Vgs=10V, Id=50A
- 阈值电压（Vgs(th)）：约 1.2V
- 耗散功率（Pd）：38W
- 总栅极电荷（Qg）：30nC @ Vgs=15V
- 输入电容（Ciss）：≈3.448nF @ 15V
- 反向传输电容（Crss）：≈421pF @ 15V
- 工作温度范围：-55℃ ~ +150℃
三、性能特点与优势
- 极低的导通电阻（8mΩ）在导通状态下显著降低导通损耗，适合高电流路径和同步整流应用。
- 较高的额定电流（50A）与较大耗散能力（38W）支持短时高功率输出，封装体积小而性能良好。
- 阈值电压较低，易于被标准逻辑或驱动器驱动；但总栅极电荷较大，需配合合适驱动器以实现快速开关。
- 较大的 Crss 意味着在开关瞬态过程中需要关注米勒效应对栅极驱动的影响。
四、应用场景
- 同步降压转换器（Synchronous Buck）与高效电源管理模块
- 电池管理与便携设备电源开关
- 负载开关、逆变器低侧开关、直流电机驱动（短时高电流场合）
- 汽车电子与工业控制中要求高可靠性的小封装功率开关
五、设计与使用建议
- 栅极驱动：由于 Qg≈30nC，推荐使用驱动器能提供足够电流以缩短上、下沿时间，常用 10–15V 驱动以获得最低 RDS(on)。
- 热管理：在高电流或连续工作条件下，应关注 PCB 散热（加大铜箔、使用多层散热通孔或外加散热片），以避免结温过高影响寿命。
- 布局注意：尽量缩短电源回路（漏极—源极）和栅极回路的走线，减小寄生电感与回路面积，降低开关振荡与 EMI。
- 并联与均流：若需更低 RDS(on)，可并联器件，但要注意驱动同步性与热均衡；小封装下并联受限于热阻和布局。
- ESD 与过压保护：按照常规 MOSFET 处理规范进行防静电措施，设计中加入栅极电阻、TVS 或软启动电路以防止开关过冲与异常应力。
六、结论
AON7403 在 SOT-23-5 小封装中提供了出色的导通性能与较高的电流承载能力，适合对体积和效率有双重要求的电源与开关应用。设计时需综合考虑栅极驱动能力、热管理与开关瞬态控制，以发挥器件最佳性能。若需更详细的参数曲线、封装图或典型应用电路，建议查阅 TECH PUBLIC 的完整规格书。
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