WMSIC Electronic Components

TECH PUBLIC PESD3V3S1UB

ModelPESD3V3S1UB
PackageSOD-523
BrandTECH PUBLIC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
TECH PUBLIC PESD3V3S1UB
Type
TECH PUBLIC
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
TECH PUBLIC
Electronic Component
PESD3V3S1UB
Electronic Component
1
Package
SOD-523
Type
ESD
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.024g
Electronic Component
1
Cj- Capacitor
110pF
Electronic Component
BM0264777487
Voltage
9V;14V
Electronic Component
IEC 61000-4-4;IEC 61000-4-2
Current(Ir)
200nA
Voltage(VBR)
5V
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

PESD3V3S1UB 产品概述

一、产品简介

PESD3V3S1UB 是一款单向静电放电(ESD)保护器件,封装为 SOD-523,适用于空间受限的消费电子与通信设备外部接口防护。品牌为 TECH PUBLIC(台舟电子),面向 USB、串口、传感器与数据线等对人体静电放电和浪涌保护有要求的场合。

二、主要电气参数

  • 反向截止电压(Vrwm):3.3V,适配3.3V 工作电压的信号线保护。
  • 击穿电压(VBR):约 5V。
  • 钳位电压:标准条件下钳位电压典型约 9V,极端条件下可达 14V(以具体测试条件为准)。
  • 峰值脉冲功率(Ppp):150W @ 8/20μs,能有效吸收短时大能量的脉冲。
  • 反向电流(Ir):≤200nA,静态漏电小,适合低功耗系统。
  • 结电容(Cj):≈110pF,对高速信号有一定影响,设计时需考虑带宽与信号完整性。
  • 防护等级:符合 IEC 61000-4-2(ESD)、IEC 61000-4-4(EFT)相关测试要求。

三、特性与优点

  • 单向保护,能在反向极性下呈高阻态,正向导通时迅速钳位放电,保护下游电路免受高压冲击。
  • 小封装(SOD-523),便于高密度 PCB 布局,适合移动设备与可穿戴终端。
  • 低漏电流与稳健的脉冲吸收能力,兼顾低功耗与可靠性。
  • 标称 Vrwm 3.3V,使其在多数 3.3V 信号线上直接使用而无需外加偏置元件。

四、典型应用场景

  • 智能手机、平板与笔记本外部接口(耳机、数据线)。
  • IoT 终端、无线模块(天线接口需注意匹配方案)。
  • 工业控制与楼宇自动化中对输入端的静电防护。
  • USB/串口/按键/触摸屏等容易遭受人身静电放电的接口。

五、使用建议与注意事项

  • 适配电压:本器件标称 Vrwm 为 3.3V,推荐用于 3.3V 信号线;若用于 5V 信号,请在实际应用中验证钳位电压与漏电对系统的影响。
  • 布局:器件应靠近被保护引脚接地走线最短、阻抗低,并做好地的回流路径管理,避免地环路。
  • 热与功率:尽管器件能承受 150W 的 8/20μs 冲击,但连续或频繁的大能量冲击会降低寿命,应配合系统防护策略(如串联阻抗、滤波)。
  • 信号完整性:结电容约 110pF,对高速或高频信号会引起带宽下降,应在高速差分对与高频接口上谨慎选型。

六、总结

PESD3V3S1UB 在小封装下提供可靠的单向 ESD 防护,适用于多数 3.3V 系统与一般接口的静电防护需求。设计时应结合具体信号速率与系统电压环境评估钳位与电容影响,以实现最佳防护与信号性能平衡。如需在 5V 系统或对钳位有严格要求的应用中使用,建议做样机验证或咨询厂商技术支持。

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