WMSIC Electronic Components

TECH PUBLIC MBR0530

ModelMBR0530
PackageSOD-123
BrandTECH PUBLIC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
TECH PUBLIC MBR0530
Type
TECH PUBLIC
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
TECH PUBLIC
Electronic Component
MBR0530
Electronic Component
1
Package
SOD-123
Electronic Component
Schottky Diode
Electronic Component
0.031g
Electronic Component
1
Electronic Component
BM0264777503
Current
5.5A
Diode
1
Current(Ir)
130uA@30V
(Vf)
430mV@500mA
Electronic Component
55℃~+125℃
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MBR0530 产品概述 — TECH PUBLIC (台舟电子)

一、核心参数概览

MBR0530 为单只独立肖特基整流二极管,适用于中低功率整流与保护场合。主要电气与机械参数如下:

  • 封装:SOD-123(表面贴装)
  • 型号/品牌:MBR0530 / TECH PUBLIC(台舟电子)
  • 正向压降:Vf = 430 mV @ If = 500 mA
  • 直流反向耐压:Vr = 30 V
  • 连续整流电流:5.5 A(额定值)
  • 非重复峰值浪涌电流:Ifsm = 5.5 A
  • 反向漏电流:Ir = 130 μA @ Vr = 30 V
  • 工作结温范围:-55 ℃ ~ +125 ℃
  • 器件类型:单只独立肖特基整流(低正向压降,快速恢复)

二、主要特点

  • 低正向压降(430 mV @ 500 mA),降低导通损耗、提升效率,适合对能耗敏感的电源应用。
  • 30 V 反向耐压可覆盖常见单节或多节低压电源及电池保护场景。
  • SOD-123 小型封装,便于高密度 PCB 布局与自动贴装。
  • 漏电流在高电压或高温下会增加(130 μA @ 30 V,需注意温度依赖性)。
  • 瞬态浪涌承受能力有限(Ifsm = 5.5 A),适用于间歇性小幅浪涌场合,非用于长期大冲击浪涌环境。

三、典型应用场景

  • 开关电源二次整流、辅助电源整流。
  • DC-DC 转换器输出整流、同步整流替代(在合适电流范围内)。
  • 反向/极性保护、低压电池保护电路。
  • 信号电源隔离、车载电子低压回路(注意实际温度与浪涌要求)。

四、封装与热管理建议

  • SOD-123 为小型表贴封装,散热依赖 PCB 铜箔面积与热过孔。设计时应在焊盘下方或周边增加铜箔面积以改善散热。
  • 在高平均电流或高环境温度下,应做额定电流降额(derating),保证结温不超出规格上限。
  • 注意回流焊工艺参数与湿热可靠性,遵循制造商推荐的焊接温度曲线(避免超温)。

五、可靠性与使用注意

  • 反向漏电流随温度显著上升,长期在高温高电压应评估泄漏对电路的影响。
  • 峰值浪涌能力有限,若电路存在较大浪涌(如感性负载断开、雷击浪涌等),需并联更大浪涌能力的器件或添加浪涌抑制元件(TVS、电阻等)。
  • 在并联使用多只器件时需注意电流均流问题,并联前需评估 Vf 匹配与热分布。

六、选型与替代建议

  • 若需更高耐压或更低漏电,可选更高 Vr 或更优肖特基工艺的型号;如需要更大瞬态浪涌能力,选用更大封装或额定 Ifsm 更高的器件。
  • 确认封装兼容性(SOD-123),若电流/散热需求更高,可考虑 DO-214AA、SMA 等更大封装。

如需我根据您的具体电路(输入电压、平均/峰值电流、环境温度、浪涌特性)给出降额计算、PCB 散热布线建议或替代型号推荐,请提供相关参数。

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