WMSIC Electronic Components

TECH PUBLIC BSP170P

ModelBSP170P
PackageSOT-223
BrandTECH PUBLIC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
TECH PUBLIC BSP170P
Type
TECH PUBLIC
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
TECH PUBLIC
Electronic Component
BSP170P
Electronic Component
1
Package
SOT-223
Electronic Component
1 P
Electronic Component
MOSFET
Electronic Component
0.23g
Electronic Component
1
Electronic Component
BM0230027713
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
2W
Electronic Component
Electronic Component
Electronic Component
2500
Voltage(Vdss)
60V
Capacitor(Ciss)
637pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BSP170P 产品概述

一、概述

BSP170P 是 TECH PUBLIC(台舟电子)推出的一款低压小功率场效应晶体管(FET),封装为 SOT-223,适用于中小电流开关与功率管理场合。器件额定漏源电压 Vdss=60V,连续漏极电流 Id=3A,工作温度范围宽 (-55℃ ~ +150℃),兼顾耐压与可靠性。

二、主要电气参数

  • 导通电阻 RDS(on):95 mΩ @ VGS=10V、ID=3A
  • 阈值电压 VGS(th):3V(典型)
  • 栅极总电荷 Qg:9.8 nC @ VGS=5V(栅极驱动需求中等)
  • 输出电容 Coss:70 pF
  • 输入电容 Ciss:637 pF @ 30V
  • 反向传输电容 Crss (Miller):53 pF @ 30V
  • 耗散功率 Pd:2 W

以上参数表明器件在 10V 栅压下能获得较低的导通电阻,但在 5V 驱动下可能无法完全达到最优导通性能;同时 Ciss 和 Crss 数值提示在开关切换时需关注驱动能力与米勒效应。

三、典型应用

  • DC-DC 转换器与同步整流(中低功率)
  • 负载开关、电源管理与保护电路
  • 小功率电机驱动与继电器替代
  • 通信与工业控制中的开关元件

四、封装与热管理

SOT-223 封装便于 PCB 布局与散热,但 Pd=2W 要求合理的铜箔散热面积与散热通孔布局。在满载(ID=3A)条件下,器件功耗可能接近 1W 量级(例如 3A×0.095Ω ≈ 0.285V 压降,对应约 0.855W 损耗),需根据环境温度和 PCB 散热设计进行功率热阻与结温评估,避免超温运行。

五、选型建议与注意事项

  • 若系统栅极驱动仅为 3.3V,应谨慎:VGS(th)=3V,5V 下 Qg 给出,但 3.3V 可能无法充分导通,导致较高 RDS(on) 与损耗。优选 10V 驱动或使用低门限逻辑级 MOSFET。
  • 开关频率较高时,Ciss 与 Qg 将直接影响驱动损耗与开关损耗,需选择合适驱动器并考虑驱动功耗。Crss(53 pF)提示米勒效应在快速上升沿会影响栅极电压,注意阻尼与 RC 保护。
  • 在设计中预留足够的散热铜面积、使用热过孔或加装散热片,以在高环境温度下满足 Pd 限制。
  • 对应电流与功耗下,应计算结-周围温度升高并进行热裕量评估,保证长期可靠性。

六、典型电路与布局建议

  • 栅极旁并联小电阻(10–100 Ω)以抑制振铃并限制峰值电流;必要时并联 TVS 或 RC 以防止过压。
  • 源极尽量靠近地参考平面,漏极大焊盘连接至散热铜箔;缩短栅极到驱动器的走线以降低寄生电感。
  • 在高频开关应用中,可在栅极与源极间并联去耦电容,改善开关行为。

总结:BSP170P 在 60V 耐压范围内以 SOT-223 封装提供了适合中低功率开关与电源管理的解决方案。为达到最佳性能,应保证足够的栅极驱动电压、合理的散热设计及合适的驱动器匹配。

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