WMSIC Electronic Components

TECH PUBLIC DMG2305UX

ModelDMG2305UX
PackageSOT-23
BrandTECH PUBLIC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
TECH PUBLIC DMG2305UX
Type
TECH PUBLIC
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
TECH PUBLIC
Electronic Component
DMG2305UX
Electronic Component
1
Package
SOT-23
Electronic Component
1 P
Type
P
Electronic Component
MOSFET
Electronic Component
0.031g
Electronic Component
1
Electronic Component
BM0264777480
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
1.7W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
20V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

DMG2305UX 产品概述

一、产品简介

DMG2305UX 是一款增强型 P 沟道 MOSFET,封装为 SOT-23,由 TECH PUBLIC(台舟电子)提供。器件针对低压电源管理与便携设备的高效功率控制而优化,结合了较低的导通电阻与快速开关特性,适合用作高端侧开关、反向电流隔离与电源路径管理元件。

二、主要电气参数

  • 漏源耐压(Vdss):20 V
  • 连续漏极电流(Id):4.1 A
  • 导通电阻(RDS(on)):52 mΩ @ VGS = -4.5 V
  • 阈值电压(|VGS(th)|):约 1 V
  • 栅极电荷(Qg):7.8 nC
  • 输入电容(Ciss):740 pF;反向传输电容(Crss):190 pF
  • 耗散功率(Pd):1.7 W(SOT-23 封装,受 PCB 散热影响较大)
  • 工作温度范围:-55 ℃ ~ +150 ℃

三、关键特性与优势

  • 低导通电阻在典型 VGS 驱动下可显著降低导通损耗,有利于提升系统效率。
  • 中等栅极电荷与输入电容在开关速度与驱动能耗之间取得平衡,适合频率不极高的开关场合。
  • 小体积 SOT-23 封装便于空间受限的便携式与消费类电子设计。
  • 宽工作温度与较高的额定电流使其在工业与汽车电子低压子系统中也具备应用潜力(需注意热设计)。

四、典型应用

  • 手机、平板等便携设备的电源路径切换与电池反接保护
  • 充电器与电源管理模块的高端侧负载开关
  • USB 电源开关、降压/升压模块中的隔离与保护电路
  • 各类要求小封装、高效率的电源控制场景

五、封装与热管理建议

SOT-23 封装的功耗能力受限,1.7 W 为理想散热条件下的标称值。实际电路应用中应:

  • 在 PCB 上为器件引脚与散热焊盘提供充足的铜箔面积,增加热扩散。
  • 尽量将热源与散热路径设计在同一层或通过过孔传导至多层铜平面。
  • 若连续电流接近额定值,应评估结温与环境温度,必要时选择并联或更大封装器件。

六、使用建议与注意事项

  • 作为 P 沟道器件,VGS 为负方向驱动:在高端侧开关中需注意驱动电平与逻辑接口兼容性(在 VGS = -4.5 V 时可获得标注 RDS(on))。
  • 校核开关损耗时应考虑 Qg 与 Ciss 对驱动能耗与开关迁移损耗的影响,必要时在栅极串联限流电阻与缓冲驱动器。
  • 布局时缩短电源回路寄生电感与减小回路面积,以降低开关噪声和 EMI。
  • 对易受静电损伤的栅极,推荐在生产与维修中采取 ESD 保护与合适的栅极保护元件。

总结:DMG2305UX 在小封装下提供了优秀的导通特性与均衡的开关性能,非常适合用于便携电源管理与高端侧开关等场景。选择该器件时,请结合实际电流、环境温度与 PCB 散热条件进行热设计与驱动匹配。

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