WMSIC Electronic Components

TECH PUBLIC SI2301CDS

ModelSI2301CDS
PackageSOT-23-3
BrandTECH PUBLIC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
TECH PUBLIC SI2301CDS
Type
TECH PUBLIC
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
TECH PUBLIC
Electronic Component
SI2301CDS
Electronic Component
1
Package
SOT-23-3
Electronic Component
1 P
Electronic Component
MOSFET
Electronic Component
0.033g
Electronic Component
1
Electronic Component
BM0264230831
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
1W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
20V
Capacitor(Ciss)
405pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SI2301CDS N沟道增强型MOSFET产品概述

一、产品基本定位与标识

SI2301CDS是台舟电子(TECH PUBLIC)推出的N沟道增强型场效应管(MOSFET),采用SOT-23-3贴片封装,属于低电压小功率器件范畴。该产品针对便携设备、小型电源等场景优化,兼顾小体积、低导通损耗与宽温适应性,是消费类电子及工业轻载控制的常用选型之一。

二、核心电性能参数解析

(一)漏源电压与电流承载能力

  • 最大漏源电压(Vdss):20V,满足低电压(≤20V)应用的绝缘要求,避免过压击穿风险;
  • 连续漏极电流(Id):3A(@25℃),支持持续负载电流达3A,脉冲电流能力可结合散热条件进一步提升;
  • 导通电阻(RDS(on)):110mΩ(@Vgs=4.5V),低导通电阻是核心优势,可显著降低导通损耗、减少发热。

(二)功耗与温度适应性

  • 最大耗散功率(Pd):1W(@25℃),在小封装下实现较高功率密度;
  • 工作温度范围:-55℃~+150℃,覆盖工业级宽温需求,可稳定工作于极端环境(如户外便携设备、低温工业场景)。

(三)开关特性与电容参数

  • 栅极电荷量(Qg):12nC,低栅极电荷意味着开关驱动电流小,易被MCU等低功率逻辑电路控制;
  • 输入电容(Ciss):405pF,反向传输电容(Crss)55pF,输出电容(Coss)75pF,电容参数匹配中速开关应用(如kHz级电源转换),兼顾开关损耗与速度平衡;
  • 阈值电压(Vgs(th)):1V(@Id=250uA),低阈值电压可被3.3V、5V逻辑电平直接驱动,无需额外驱动电路,简化设计。

三、封装与物理特性

SI2301CDS采用SOT-23-3贴片封装,尺寸约为1.6mm×1.0mm×0.9mm(长×宽×高),属于超小型贴片封装,适合高密度PCB布局(如便携设备内部紧凑空间)。引脚定义为:1脚栅极(G)、2脚漏极(D)、3脚源极(S),引脚间距符合标准SOT-23规范,便于自动化贴装。

四、典型应用场景

结合参数特性,SI2301CDS广泛应用于以下场景:

  1. 便携电子设备:智能手机、平板电脑、蓝牙耳机、智能手环等的电源管理(如负载开关、电池保护辅助);
  2. 小型DC-DC转换:5V/3A以下的同步降压/升压电路(作为同步整流管或开关管);
  3. 负载通断控制:低电压小功率负载(如LED驱动、小型电机)的通断开关;
  4. 工业轻载控制:-55℃~+150℃宽温环境下的低功率开关电路(如传感器信号控制);
  5. 消费类电子配件:移动电源、充电器的辅助开关(如输出通断控制)。

五、选型优势总结

  • 小体积高集成:SOT-23-3封装适合紧凑设计,不占用额外PCB空间;
  • 低损耗易驱动:110mΩ低导通电阻+1V低阈值,兼顾效率与驱动便利性;
  • 宽温适应性:覆盖工业级温度范围,满足极端环境需求;
  • 成本可控:台舟电子量产化封装,性价比高,适合批量应用。

该器件参数均衡,适配多场景需求,是低电压小功率MOSFET选型的可靠选择。

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