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TWGMC SI2302 N-Channel MOSFET SI2302
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- TWGMC SI2302
- Type
- TWGMC
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- TWGMC
- Electronic Component
- SI2302
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.04g
- Electronic Component
- 1
- Electronic Component
- BM0220656389
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 350mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：SI2302
品牌背景
SI2302是由TWGMC（台湾迪嘉）生产的一款重要的电子元器件。TWGMC成立于2000年，致力于为全球客户提供高性能的半导体产品。公司专注于MOSFET、二极管和其他功率管理元件的研发与制造，广泛应用于消费电子、汽车电子、通信设备和工业控制等多个领域。
基本信息
- 产品名称：SI2302
- 封装类型：SOT-23
- 典型应用：低电压开关、负载驱动、电子开关，服务于DC-DC转换器、LED驱动器和其他功率控制电路。
技术规格
SI2302是一款N沟道增强型MOSFET，具有出色的导通性能和低开关损耗。以下是其主要技术参数：
- 工作电压（VDS）：最大为20V
- 连续漏电流（ID）：可达3.2A（在25°C时）
- RDS(on)：最低可达0.12Ω（VGS=4.5V时）
- 门极阈值电压（VGS(th)）：在1.0V-2.5V范围内
- 输入电容量（Ciss）：约为2300pF
- 输出电容量（Coss）：约为220pF
- 反传导电容量（Crss）：约为75pF
应用场景
低电压开关：SI2302的低导通电阻使其在低电压环境中表现出色，特别适用于手机、平板电脑等便携式电子设备中的电源开关。
LED驱动器：在LED照明领域，SI2302可以用作LED驱动电路中的开关元件，凭借其高效的导通性能，能够减少发热，从而提高系统的整体效率。
DC-DC转换器：广泛应用于开关电源和高频DC-DC转换器中，SI2302能够有效地提升转换效率，降低功耗，特别是在要求严格的电子设备中更是不可或缺的。
负载驱动：可以被应用于电机控制和负载驱动电路中，控制大电流的开关，确保系统高效运行。
优点
低导通电阻：SI2302具有极低的RDS(on)，在开启状态下，效率更高，发热量小，有助于提高系统的功率等级。
宽工作电压范围：适应多种应用场景，同时可在较高温度下稳定工作，适合广泛的条件下使用。
小型化封装：作为SOT-23封装，SI2302面积小，适合各种紧凑型电子设备，帮助设计师节省PCB空间。
成本效益：SI2302提供较高性能的同时，价格合理，适合大批量生产，符合市场对成本的需求。
结论
SI2302是一款多功能的N沟道MOSFET，具有广泛的应用潜力，适用于现代电子产品的各个领域。其优异的电气特性和小巧的封装设计使其成为设计师和工程师值得信赖的选择。无论是在功率开关、LED驱动还是DC-DC转换器中，SI2302都能为产品的高效和稳定运行提供强有力的支持。随着电子行业的发展，SI2302将继续发挥重要作用，助力智能化电子产品的不断升级。
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