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TWGMC SMBJ33A TVS Diode SMBJ33A
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- TWGMC SMBJ33A
- Type
- TWGMC
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- TWGMC
- Electronic Component
- SMBJ33A
- Electronic Component
- 1
- Package
- SMB
- Electronic Component
- Electronic Component
- Type
- TVS
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.152g
- Electronic Component
- 1
- Cj- Capacitor
- 390pF
- Electronic Component
- BM0230007211
- Operating Temperature
- 65℃~+150℃
- Voltage
- 53.3V
- Current(Ir)
- 1uA
- Voltage(VBR)
- 40.6V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SMBJ33A — TWGMC 单向瞬态抑制二极管（TVS）产品概述
一、简介
SMBJ33A 为 TWGMC（台湾迪嘉）制造的单向 TVS（瞬态抑制二极管），采用 SMB（DO‑214AA）封装，专用于抑制电源及信号线上的瞬态过压与浪涌冲击。器件设计用于在瞬态事件（如雷击、开关瞬变、ESD）发生时快速钳位电压，保护下游电子元件免受损坏。
二、主要电气参数
- 极性：单向
- 反向稳态电压 Vrwm：33 V
- 击穿电压（Vbr）：40.6 V（典型）
- 钳位电压 Vc（Ipp）：53.3 V
- 峰值脉冲电流 Ipp：11.3 A @ 10/1000 μs 波形
- 峰值脉冲功率 Ppp：600 W @ 10/1000 μs
- 反向漏电流 Ir：1 μA（额定条件）
- 结电容 Cj：390 pF（典型）
- 工作温度范围：-65 ℃ ~ +150 ℃
三、产品特性与优势
- 高能量吸收能力：在 10/1000 μs 波形下可承受 600 W 峰值功率及 11.3 A 峰值脉冲电流，适合工业级浪涌防护。
- 低反向漏电：典型漏电仅 1 μA，满足对静态耗电敏感的应用。
- 宽工作温度范围：适用极端环境与汽车级附近场景。
- SMB 封装：体积适中，易于波峰/回流焊工艺安装，适配常规 PCB 布局。
四、典型应用场景
- DC 电源线浪涌保护（直流电源总线、适配器输出）
- 工业控制设备、电源模块、逆变器等高能瞬态环境
- 通信与网络设备的电源防护（注意结电容对高速信号的影响）
- 汽车电子（对工作电压与温度有更高要求的子系统）
五、选型与布局注意事项
- 确认 Vrwm（33 V）高于系统正常工作电压并留有裕量；若系统工作电压接近 Vrwm，可能触发器件工作。
- 钳位电压 53.3 V 为瞬态钳位值，需确认下游器件能承受此电压峰值。
- 结电容 390 pF 较大，影响高速信号—不建议用于需低电容的高速数据线直接保护。
- 单向器件在电路中正向连接方式：带色环的一端为阴极，通常接向电源正端，另一端接地（负端）；请按器件手册确认引脚标识与极性。
六、存储、焊接与可靠性提示
- 建议按常规 SMT 元件存储条件保存，避免潮湿；若为吸湿敏感等级，请参照元件出厂说明进行烘烤。
- 支持回流焊，但应遵循厂商给出的焊接温度曲线以保证可靠性。
- 在工程设计中配合熔断器、限流器件或浪涌吸收网络，可进一步提升系统的整体防护能力。
如需完整的器件数据手册（含最大额定值、典型特性曲线、封装尺寸与焊接曲线），建议联系 TWGMC（台湾迪嘉）或经销商索取 SMBJ33A 的官方技术资料以便做最终设计验证。
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