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TWGMC 2N7002K N-Channel MOSFET 2N7002K
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- TWGMC 2N7002K
- Type
- SOT-23
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- TWGMC
- Electronic Component
- 2N7002K
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.032g
- Electronic Component
- 1
- Electronic Component
- BM0228587079
- Operating Temperature
- 50℃~+150℃
- Power Dissipation(Pd)
- 350mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 60V
- Capacitor(Ciss)
- 40pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
2N7002K 产品概述
一、主要参数概览
- 器件类型：N沟增强型场效应管（MOSFET），单颗
- 品牌/型号：TWGMC（台湾迪嘉） 2N7002K
- 封装：SOT-23
- 漏源电压 Vdss：60V
- 阈值电压 Vgs(th)：1.3V
- 导通电阻 RDS(on)：900mΩ @ VGS=10V, ID=500mA
- 连续漏极电流 ID：340mA
- 耗散功率 Pd：350mW
- 输入电容 Ciss：40pF；输出电容 Coss：30pF；反向传输电容 Crss：10pF
- 工作温度范围：-50℃ ~ +150℃
二、产品特点与应用场景
2N7002K 为低至中电平电压、小信号开关之用的N沟MOSFET，适合在60V耐压要求下做开关或电平转换。小封装（SOT-23）与较低寄生电容使其在高频开关、GPIO电平转换、负载侧开关、反向保护或小电流荷载驱动（继电器驱动前级、指示灯、传感器隔离等）方面表现良好。阈值电压约1.3V，便于与低压控制器配合，但其RDS(on)在10V下仍近0.9Ω，非低电阻大电流开关器件。
三、典型使用与注意事项
- 门极驱动：为获得标称RDS(on)需接近10V的VGS；若用3.3V或5V门极驱动，应根据实际导通电阻和功率损耗评估温升与效率。
- 散热与功耗：Pd=350mW，连续工作时需严格控制功耗（P=I²·RDS(on)）；在高环境温度或持续高电流场合应降额使用或选用更大功率器件。
- 反向二极管：内置体二极管在换向时有导通损耗，适合低频或单向开关场合，高频双向开关需注意回路设计。
- ESD与门极保护：门极容值较小但对静电敏感，建议在易损环境中加门极电阻或TVS保护。
四、封装与焊接建议
SOT-23小封装便于面贴安装（SMT），适合空间受限的电路板设计。焊盘设计应遵循厂家推荐图样以保证可靠焊接与热流散。回流焊温度曲线按通用SOT-23规范执行，在线路板布局上尽量缩短漏、源走线以降低封装引线阻抗。
五、选型提示
若应用要求较大的导通电流或在低VGS下低损耗工作，应考虑RDS(on)显著更小且Pd更高的逻辑级MOSFET。若工作电压接近60V且电流较小且需小体积、低电容特性，则2N7002K为成本与性能较平衡的选择。
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