WMSIC Electronic Components

TWGMC SMCJ30A TVS Diode SMCJ30A

ModelSMCJ30A
PackageSMC
BrandTWGMC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
TWGMC SMCJ30A
Type
TWGMC
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
TWGMC
Electronic Component
SMCJ30A
Electronic Component
1
Package
SMC
Electronic Component
Electronic Component
Type
TVS
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.38g
Electronic Component
1
Channel Count
Electronic Component
Electronic Component
BM0226538260
Operating Temperature
55℃~+150℃
Voltage
48.4V
Current(Ir)
1uA
Voltage(VBR)
36.8V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SMCJ30A 产品概述

一、产品简介

SMCJ30A 为单通道、单向瞬态电压抑制器(TVS),由台湾品牌 TWGMC(台湾迪嘉)提供,采用 SMC(DO-214AB)封装。器件设计用于在瞬态过电压事件中快速钳位,保护电源线和敏感电子器件免受浪涌、电气瞬变损伤。工作温度范围宽 (-55℃ 至 +150℃),适应工业及汽车等苛刻环境。

二、主要电气参数

  • 钳位电压(Vc):48.4 V(在规定攻击波下)
  • 击穿电压(Vbr):36.8 V
  • 反向截止电压 Vrwm:30 V(额定稳压工作电压)
  • 峰值脉冲功率 Ppp:1.5 kW @ 10/1000 μs
  • 峰值脉冲电流 Ipp:31 A @ 10/1000 μs
  • 反向漏电流 Ir:1 μA(在 Vrwm 下典型值)
  • 通道数:单路;极性:单向;类型:TVS

三、性能特点

  • 单向结构在正向瞬态时低压降钳位,反向可像整流二极管一样阻断直流,适合直流或单极信号线路保护。
  • 对应 10/1000 μs 标准脉冲,具备 1.5 kW 的能量吸收能力,适合中高能量浪涌防护(例如雷击感应或开关瞬变)。
  • 低反向漏电流(1 μA)有助于降低系统待机功耗并保护敏感电路。
  • 宽温度范围和 SMC 封装利于散热和耐用性,适合长期可靠工作。

四、典型应用

  • 24 V 级电源总线和工业控制系统的浪涌保护(Vrwm=30 V 对应常见 24 V 系统)。
  • 通信设备、电源输入端、DC/DC 转换器保护。
  • 汽车电子、重工仪器及户外设备中需要抗浪涌保护的场景。

五、布局与使用建议

  • 将 TVS 器件尽可能靠近被保护端口或引入点布置,缩短走线以降低串联电感,提升钳位效果。
  • 对于高能量事件,建议与熔断器、限流电阻或配套电感一起使用,以分担能量并保护 TVS 本体。
  • 保持良好散热路径,SMC 封装通过大焊盘和散热层可提升能量吸收能力和重复冲击寿命。

六、存储与可靠性

  • 建议防潮包装存储,遵循常见器件管脚防静电和防潮要求。
  • 在额定温度范围内工作可获得最佳可靠性;超出额定条件可能降低寿命或导致失效。

七、选型注意事项

  • 确认系统最大工作电压低于 Vrwm(30 V),且期望钳位电压(48.4 V)能保护下游器件。
  • 若系统可能遭受更高能量或更短脉宽的冲击,需参考厂家详尽能量表和冲击曲线,或选用更高功率等级的 TVS。
  • 结合实际应用评估峰值电流、冲击波形(如 8/20 μs、10/1000 μs)与器件额定条件的一致性。

如需封装尺寸、IV 曲线或老化/冲击试验数据,可进一步提供器件数据表以便做更精确的设计与验证。

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