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TOREX XP161A1355PR-G MOSFET XP161A1355PR
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- TOREX XP161A1355PR-G
- Type
- TOREX
- Unit
- Electronic Component
- Minimum package
- 1000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- TOREX
- Electronic Component
- XP161A1355PR-G
- Electronic Component
- 1
- Package
- SOT-89
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.13g
- Electronic Component
- 1
- Electronic Component
- BM0257666022
- Power Dissipation(Pd)
- 2W
- Electronic Component
- Electronic Component
- Electronic Component
- 1000
- Voltage(Vdss)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
XP161A1355PR-G 产品概述
一、产品简介
XP161A1355PR-G 为 TOREX（特瑞仕）推出的一款 N 沟道 MOSFET，典型应用于低压逻辑侧开关与功率管理场景。器件标称漏-源电压 Vdss = 20V，连续漏极电流 Id = 4A，适合 2.5V/3.3V 系统的低压功率切换需求。封装为 SOT-89，体积极小，利于空间受限的便携设备设计。
二、主要电气参数
- 漏源电压 Vdss：20V
- 连续漏极电流 Id：4A（受封装散热限制）
- 导通电阻 RDS(on)：70mΩ @ Vgs = 2.5V（逻辑电平驱动）
- 耗散功率 Pd：2W（封装限值，需注意 PCB 散热）
- 输入电容 Ciss：390pF
- 输出电容 Coss：210pF
- 反向传输电容 Crss：90pF
三、封装与热管理
SOT-89 封装体积小、焊盘面积有限，Pd = 2W 表明在高电流或持续开关条件下需靠 PCB 铜箔扩散热量。建议在器件底部和引脚处增加大面积铜箔和热盲孔或连接到大面积地层，以降低结温并提升持续导电能力。使用时应参考 SOA（安全工作区域）并考虑峰值脉冲电流能力。
四、应用场景
- 便携消费电子的电源负载开关
- 低压 MOSFET 做低侧开关或反向电流隔离
- LED 驱动、背光电源开关
- 小电流电机驱动与继电器驱动前端开关
- DC-DC 转换器输出侧开关（需注意开关损耗）
五、设计与使用建议
- 由于 Ciss/Crss 较大，切换速度快时会增加开关损耗，建议配合门极电阻以抑制振铃并控制 dV/dt。
- 当以 2.5V 驱动门极时可获得标注的 70mΩ 导通阻抗，若驱动电压更低需验证 RDS(on) 变化。
- 对感性负载应并联飞轮二极管或软关断策略以降低电压尖峰。
- PCB 布局：缩短漏源回流路径，增大铜厚和面积以提升散热与电流承载能力。
六、选型提示
在选择本件替代更大电流器件时，除看 Id，还要综合考虑封装散热 Pd、SOA 与实际结温。XP161A1355PR-G 在 20V/4A 范围内为体积敏感、需逻辑电平驱动的场合提供了良好平衡。
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