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UMW PESD3V3S2UT
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- UMW PESD3V3S2UT
- Type
- UMW
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- UMW
- Electronic Component
- PESD3V3S2UT
- Electronic Component
- 1
- Package
- SOT-23
- Type
- ESD
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.033g
- Electronic Component
- 1
- Cj- Capacitor
- 200pF
- Electronic Component
- BM0225985269
- Voltage
- 16V
- Electronic Component
- IEC 61000-4-4；IEC 61000-4-5；IEC 61000-4-2
- Current(Ir)
- 100nA
- Voltage(VBR)
- 6.5V
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
PESD3V3S2UT 产品概述
一、产品简介
PESD3V3S2UT 是 UMW（友台半导体）推出的一款面向 3.3V 系统的瞬态抑制二极管（TVS/ESD）器件，采用 SOT-23 封装，专为静电放电和浪涌保护设计。器件在 IEC 61000-4-2、IEC 61000-4-4 和 IEC 61000-4-5 标准下具有良好防护性能，适用于通信接口、电源线与一般信号线的过电压钳制。
二、主要参数与特性
- 类型：ESD / TVS（适用于 3.3V 系统，单向保护）
- 钳位电压（Vc）：16 V（典型）
- 击穿电压（Vbr）：6.5 V
- 反向截止电压（Vrwm）：3.3 V（工作电压）
- 峰值脉冲功率（Ppp）：350 W @ 8/20µs
- 峰值脉冲电流（Ipp）：20 A @ 8/20µs
- 结电容（Cj）：约 200 pF
- 漏电流（Ir）：≤ 100 nA
- 防护等级：符合 IEC 61000-4-2 / 4-4 / 4-5
- 封装：SOT-23 这些参数表明该器件在短时浪涌与静电脉冲下能快速钳位并吸收能量，同时保持极低的静态漏电。
三、典型应用
- 3.3V 电源轨的浪涌与静电保护
- MCU、传感器、控制信号的端口保护（低速信号）
- 工业控制、家用电器与物联网终端的输入保护 注意：由于较高的结电容（约 200 pF），不建议用于对信号完整性要求高的高速差分数据线（如 USB2.0/USB3.0、HDMI 等）。
四、布局与使用建议
- 尽量将 TVS 器件靠近需要保护的外部接口/连接器放置，走线最短以降低感性串扰和钳位延迟。
- 将器件的地端与系统地面短接并使用宽铜箔回流，保证浪涌电流有低阻抗回路。
- 对于敏感高速信号，可在 TVS 前串联小电阻或采用低电容专用保护器件以兼顾传输质量。
- SOT-23 封装在 PCB 布局时注意热散与焊盘尺寸，必要时参考厂商推荐封装与焊盘设计。
五、选型要点与封装信息
- 若保护对象为直流 3.3V 供电轨或低速控制信号，PESD3V3S2UT 是经济且性能平衡的选择。
- 若需更低电容以保护高速数据线，应选择专用低 Cj 的 TVS/ESD 器件。
- 封装为 SOT-23，适合自动贴片加工与小尺寸 PCB 设计。具体引脚定义与封装尺寸请以官方数据手册为准。
六、符合标准与可靠性
PESD3V3S2UT 已通过 IEC 61000-4-2（静电放电）、IEC 61000-4-4（电快速瞬变）和 IEC 61000-4-5（浪涌）相关测试，能够在工业与民用环境下对突发过压事件提供保护。最终设计中建议结合器件的钳位特性与被保护器件的耐压能力进行系统级验证。
订购信息示例：型号 PESD3V3S2UT，品牌 UMW（友台半导体），封装 SOT-23。购买与最终设计前请下载并确认厂商最新版数据手册与推荐封装焊盘图。
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