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UTC 1N60G-AA3-R 1N60G
Configuration
1 options
Configuration
Electronic Component
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- UTC 1N60G-AA3-R
- Type
- UTC
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- UTC
- Electronic Component
- 1N60G-AA3-R
- Electronic Component
- 1
- Package
- SOT-223
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.307g
- Electronic Component
- 1
- Electronic Component
- BM0257640412
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 8W
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- Voltage(Vdss)
- 600V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：1N60G-AA3-R MOSFET
一、基本信息
1N60G-AA3-R 是一款高性能的 N 沟道场效应管（MOSFET），由知名品牌 UTC（友顺）生产。其具备 8W 的功率处理能力、600V 的高电压额定值以及 1A 的电流处理能力。该 MOSFET 采用 SOT-223 封装，适用于多种电子应用。
二、技术规格
- 封装类型：SOT-223
- 极性：N 沟道
- 最大电压：600V
- 最大电流：1A
- 功率处理能力：8W
- 开启电压（VGS(th)）：通常在 1V 至 3V 之间，具体值视具体产品批次而定
- 导通电阻（RDS(on)）：一般在几个百欧姆的范围内
- 开关速度：具备较快的开关特性，适合高频应用
三、产品特点
- 高耐压能力：该 MOSFET 具有较高的耐压设计（600V），适合高电压应用场合，能够满足电源转换、电机驱动等场合的需求。
- 优良的导通性能：较低的导通电阻意味着在导通状态下能量损耗较小，适合那些需要高效率的应用。
- 快速开关特性：该器件能够快速打开和关闭，因此适合高频率的开关电源应用，提高了系统效率。
- 紧凑的封装：SOT-223 封装不仅减小了占用空间，还适合高密度电路板设计，便于更好的集成和散热。
四、应用领域
- 开关电源：1N60G-AA3-R MOSFET 适用于开关电源（SMPS），其高效率和良好的热性能使其成为理想的开关元件。
- 电机驱动：可用于驱动直流电机、步进电机等应用，提供高效的电源管理。
- LED 驱动电路：在 LED 打光控制中，MOSFET 能够快速响应，从而实现更精确的亮度控制。
- 电源管理：在各种电源管理系统中，如电池充电器、DC-DC 转换器等，能够有效调节输出电压和电流。
五、使用注意事项
- 在设计电路时，需注意该 MOSFET 的最大电压和电流限制，避免在工作条件超过其额定值的情况下使用。
- MOSFET 的效率在高温下可能下降，设计中要考虑适当的散热措施，确保器件在安全温度范围内工作。
- 实施适当的驱动电路，以确保在开关操作中提供足够的 VGS 电压，使 MOSFET 能够迅速达到导通状态。
六、总结
1N60G-AA3-R MOSFET 是一款高效能、高耐压的 N 沟道场效应管，广泛适用于各类电力电子产品。凭借其稳定的工作性能和快速的开关特性，该器件成为现代电子设计中不可或缺的重要元件。无论是在开关电源还是在电机驱动，1N60G-AA3-R 都能够实现出色的性能表现，为用户带来高效的解决方案。选择 UTC 的 1N60G-AA3-R MOSFET，将助力于提升您的产品竞争力和市场占有率。
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