WMSIC Electronic Components

UTC 2N7002G-AE2-R 2N7002G

Model2N7002G-AE2-R
PackageSOT-23-3
BrandUTC
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
UTC 2N7002G-AE2-R
Type
UTC
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
UTC
Electronic Component
2N7002G-AE2-R
Electronic Component
1
Package
SOT-23-3
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.036g
Electronic Component
1
Electronic Component
BM69415916
Operating Temperature
40℃~+150℃
Power Dissipation(Pd)
200mW
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
60V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述:2N7002G-AE2-R

2N7002G-AE2-R是由UTC(友顺)品牌推出的一款N沟道场效应管(MOSFET),其封装形式为SOT-23-3。这款MOSFET具有众多优良的电气特性和广泛的应用场景,适合电子工程师和设计师在不同的电子设备中使用。

1. 基本参数

  • 类型:N沟道MOSFET
  • 功率:200 mW
  • 额定电压:60 V
  • 漏极电流:300 mA
  • 封装类型:SOT-23-3

2. 结构特性与工作原理

MOSFET是一种使用电场进行控制的晶体管,分为N型和P型两种。在2N7002G-AE2-R的情况下,它是N沟道MOSFET,这意味着电子是主要的导电载流子。当在栅极施加适当的电压时,MOSFET内部的电场会使源极与漏极之间形成导通通道,允许电流通过。

由于N沟道MOSFET在导通时具有较低的导通电阻(R_DS(on)),它在低开通电压条件下有效地控制大电流流过,从而适合用于各种低功耗应用。

3. 应用场景

2N7002G-AE2-R的电气特性和封装形式使其适合多种应用,包括但不限于:

  • 开关电路:由于其低导通电阻和高开关速度,2N7002G-AE2-R可用于驱动开关电路,控制负载的开关状态。
  • 数字电路:在微控制器或数字逻辑电路中,该MOSFET可以作为信号放大器或开关,控制更高电流的负载。
  • 功率管理:该MOSFET能够有效地控制能量流动,适用于电池管理和能量监控系统。
  • LED驱动:在LED驱动电路中,使用2N7002G-AE2-R可以实现精确的电流控制,从而延长LED的使用寿命和提高光输出效率。

4. 性能优点

  • 高集成度:由于SOT-23-3的封装小巧,2N7002G-AE2-R能在空间受限的应用中有效使用,同时降低了电路板的总体面积。
  • 稳定性良好:具备良好的热稳定性和耐用性,能够在各种工作环境下保持稳定性能。
  • 低开通电压:操作简单,能够在低电压条件下打开和关闭,降低对控制电路的需求。
  • 高频应用:可实现高速开关,从而在高频率信号处理时不会显著降低效率。

5. 设计考虑

在使用2N7002G-AE2-R时,设计师需要确保:

  • 合理选择栅极驱动电压,以确保MOSFET充分导通,避免输出功率损耗。
  • 考虑泄漏电流和电流限制,以防止超标造成的损害。
  • 采取热管理措施,以确保最大运行电流和功率下MOSFET的稳定性。

6. 总结

2N7002G-AE2-R作为一款高性价比、性能优越的N沟道MOSFET,是电子设计和电路开发中一个非常不错的选择。它的高开关速度、低导通电阻和广泛的应用适应性使其成为许多现代电子设备的关键组件。无论是在商业产品还是在个人项目中,合理利用该产品的性质,可以有效提高电路的整体性能和可靠性。

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